Display panel, input/output device, data processing device, and method for manufacturing display panel

ABSTRACT

To provide a novel display panel that is highly convenient or reliable. To provide a novel input and output device that is highly convenient or reliable. To provide a novel data processing device that is highly convenient or reliable. To provide a method for manufacturing a novel display panel that is highly convenient or reliable. The display panel includes a pixel, a third conductive film electrically connected to the pixel, an insulating film including an opening portion overlapping with the third conductive film, and an electrode including a first region in contact with the third conductive film and a second region functioning as a contact point.

TECHNICAL FIELD

One embodiment of the present invention relates to a display panel, aninput/output device, a data processing device, a semiconductor device,or a method for manufacturing a display panel.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of one embodiment of theinvention disclosed in this specification and the like relates to anobject, a method, or a manufacturing method. Furthermore, one embodimentof the present invention relates to a process, a machine, manufacture,or a composition of matter. Specifically, examples of the technicalfield of one embodiment of the present invention disclosed in thisspecification include a semiconductor device, a display device, alight-emitting device, a power storage device, a memory device, a methodfor driving any of them, and a method for manufacturing any of them.

BACKGROUND ART

For example, portable data processing devices are often used outdoors,and force might be accidentally applied by dropping to the dataprocessing devices and display devices included in them. As an exampleof a display device that is not easily broken, a display device havinghigh adhesiveness between a structure body by which a light-emittinglayer is divided and a second electrode layer is known (Patent Document1).

As other examples, a liquid crystal display device in which alight-condensing means and a pixel electrode are provided on the samesurface side of a substrate and a region transmitting visible light inthe pixel electrode is provided to overlap with an optical axis of thelight-condensing means, and a liquid crystal display device thatincludes an anisotropic light-condensing means having a condensingdirection X and a non-condensing direction Y that is along alongitudinal direction of a region transmitting visible light in a pixelelectrode are known (Patent Document 2).

REFERENCES Patent Documents

[Patent Document 1] Japanese Published Patent Application No.2012-190794

[Patent Document 2] Japanese Published Patent Application No.2011-191750

DISCLOSURE OF INVENTION

An object of one embodiment of the present invention is to provide anovel display panel that is highly convenient or reliable. Anotherobject is to provide a novel input/output device that is highlyconvenient or reliable. Another object is to provide a novel dataprocessing device that is highly convenient or reliable. Another objectis to provide a method for manufacturing a novel display panel that ishighly convenient or reliable. Another object is to provide a noveldisplay panel, a novel input/output device, a novel data processingdevice, a novel semiconductor device, or a method for manufacturing anovel display device.

Note that the descriptions of these objects do not disturb the existenceof other objects. In one embodiment of the present invention, there isno need to achieve all the objects. Other objects will be apparent fromand can be derived from the description of the specification, thedrawings, the claims, and the like.

(1) One embodiment of the present invention is a display panel includinga pixel, an insulating film, a third conductive film, and an electrode.

The insulating film includes a region overlapping with the pixel, andthe insulating film includes an opening portion.

The third conductive film is electrically connected to the pixel, thethird conductive film includes a region overlapping with the insulatingfilm, and the third conductive film includes a region overlapping withthe opening portion.

The electrode is electrically connected to the third conductive film,and the electrode includes a first region and a second region.

The first region is in contact with the third conductive film. Thesecond region functions as a contact point.

The opening portion includes a region occupied by the third conductivefilm or the electrode.

(2) One embodiment of the present invention is the display panel inwhich the insulating film has a thickness larger than or equal to 0.2 μmand smaller than or equal to 1.5 μm and the insulating film has a watervapor transmission rate lower than or equal to 10⁻³ g/(m²·day),preferably lower than or equal to 10⁻⁴ g/(m²·day), more preferably lowerthan or equal to 10⁻⁵ g/(m²·day).

(3) One embodiment of the present invention is the display panel thatincludes a first base and a second base.

The first base includes a region overlapping with the insulating film.The second base includes a region that is positioned so that theinsulating film is between the first base and the region of the secondbase.

The display panel of one embodiment of the present invention includesthe pixel, the third conductive film electrically connected to thepixel, the insulating film including the opening portion overlappingwith the third conductive film, and the electrode including the firstregion in contact with the third conductive film and the second regionfunctioning as a contact point. Thus, a signal, electric power, or thelike can be supplied to the pixel protected by the insulating film. As aresult, a novel display panel that is highly convenient or reliable canbe provided.

(4) One embodiment of the present invention is the display panel thatincludes one group of pixels, the other group of pixels, a signal line,and a scan line.

The pixel is included in the one group of pixels. The one group ofpixels are arranged in a row direction.

The pixel is included in the other group of pixels. The other group ofpixels are arranged in a column direction intersecting with the rowdirection.

The one group of pixels are electrically connected to the scan line.

The other group of pixels are electrically connected to the signal line.

The scan line or the signal line is electrically connected to the thirdconductive film.

(5) One embodiment of the present invention is the display panel thatincludes a driver circuit.

The driver circuit is configured to supply an image signal, and thedriver circuit is electrically connected to the second region. Thesignal line is electrically connected to the third conductive film.

(6) One embodiment of the present invention is the display panel inwhich the first base and the second base have flexibility. The pixelincludes a pixel circuit and a display element.

The pixel circuit is electrically connected to the signal line, and thedisplay element is electrically connected to the pixel circuit.

The display panel of one embodiment of the present invention includesthe first base having flexibility, the second base having flexibility,and the display element electrically connected to the pixel circuitoverlapping with the insulating film positioned between the first baseand the second base. Thus, the display element can be bent between thefirst base and the second base. As a result, a novel display panel thatis highly convenient or reliable can be provided.

(7) One embodiment of the present invention is the display panel inwhich the pixel includes a pixel circuit, a first conductive film, afirst display element, and a second display element.

The pixel circuit is electrically connected to the signal line.

The first conductive film includes a first region overlapping with thesecond conductive film. The first conductive film includes a secondregion that is positioned so that the insulating film is between thesecond region of the first conductive film and the second conductivefilm. The first conductive film includes a third region that ispositioned so that the opening portion is between the third region ofthe first conductive film and the second conductive film. The firstconductive film is electrically connected to the second conductive filmin the opening portion.

The first display element is electrically connected to the firstconductive film. The second display element is electrically connected tothe pixel circuit.

Thus, the first display element and the second display element thatdisplays an image using a method different from that of the firstdisplay element can be driven using a pixel circuit that can be formedin one process, for example. Specifically, a reflective display elementis used as the first display element, whereby the power consumption canbe reduced. In addition, an image with high contrast can be favorablydisplayed in an environment with bright external light. In addition, thesecond display element which emits light is used, whereby an image canbe favorably displayed in a dark environment. Furthermore, using theinsulating film, impurity diffusion between the first display elementand the second display element or between the first display element andthe pixel circuit can be suppressed. As a result, a novel display devicethat is highly convenient or reliable can be provided.

(8) One embodiment of the present invention is the display panel inwhich the second display element is positioned so that display using thesecond display element can be seen from part of a region where displayusing the first display element can be seen.

Accordingly, display using the second display element can be seen frompart of the region where display using the first display element can beseen. Alternatively, a user can see the display without changing theattitude or the like of the display panel. Thus, a novel display panelthat is highly convenient or reliable can be provided.

(9) One embodiment of the present invention is an input/output devicethat includes the display panel and an input portion.

The input portion includes a region overlapping with the display panel,and the input portion includes a control line, a sensing signal line,and a sensing element.

The sensing element is electrically connected to the control line andthe sensing signal line.

The control line is configured to supply a control signal.

The sensing element receives the control signal and has a function ofsupplying the control signal and a sensor signal which changes inaccordance with a distance between the sensing element and an objectapproaching the region overlapping with the display panel.

The sensing signal line is configured to be supplied with the sensingsignal.

The sensing element has a light-transmitting property, and the sensingelement includes a first electrode and a second electrode.

The first electrode is electrically connected to the control line, thesecond electrode is electrically connected to the sensing signal line,and the second electrode is positioned so that an electric field whichis partly blocked by the object that approaches the region overlappingwith the display panel is generated between the second electrode and thefirst electrode.

Thus, the object that approaches the region overlapping with the displaypanel can be sensed while image data is displayed by the display panel.As a result, a novel input/output device that is highly convenient orreliable can be provided.

(10) One embodiment of the present invention is a data processing devicethat includes at least one of a keyboard, a hardware button, a pointingdevice, a touch sensor, an illuminance sensor, an imaging device, anaudio input device, a gaze input device, and a pose detection device,and the input/output device.

Thus, an arithmetic device can generate image data or control data onthe basis of positional data supplied using the input/output device. Asa result, a novel data processing device that is highly convenient orreliable can be provided.

(11) One embodiment of the present invention is a method formanufacturing the display panel that includes first to eleventh steps.

In the first step, a separation film is formed over a substrate for usein a manufacturing process (hereinafter referred to as processsubstrate).

In the second step, a first insulating film including a regionoverlapping with the separation film is formed.

In the third step, the first insulating film is heated.

In the fourth step, the second insulating film including a regionoverlapping with the first insulating film is formed.

In the fifth step, the opening portion is formed in the secondinsulating film and an opening portion overlapping with the openingportion is formed in the first insulating film and the separation film.

In the sixth step, the electrode in contact with the process substrateis formed in the opening portion.

In the seventh step, the conductive film in contact with the electrodeand the pixel circuit electrically connected to the conductive film areformed.

In the eighth step, the display element electrically connected to thepixel circuit is formed.

In the ninth step, the second base is stacked to overlap with the secondinsulating film.

In the tenth step, separation from the process substrate is performed.

In the eleventh step, the first base is stacked.

The method for manufacturing the display panel of one embodiment of thepresent invention includes the following steps: forming a separationfilm over a process substrate; forming an opening portion in a secondinsulating film and an opening portion overlapping with the openingportion in the separation film; forming an electrode in contact with theprocess substrate in the opening portion; forming a conductive film incontact with the electrode, a pixel circuit electrically connected tothe conductive film, and a display element electrically connected to thepixel circuit; and performing separation from the process substrate.Thus, the electrode can have one end in contact with the conductive filmand the other end exposed at the opening portion. As a result, a methodfor manufacturing a novel display panel that is highly convenient orreliable can be provided.

Although the block diagram attached to this specification showscomponents classified by their functions in independent blocks, it isdifficult to classify actual components according to their functionscompletely and it is possible for one component to have a plurality offunctions.

In this specification, the terms “source” and “drain” of a transistorinterchange with each other depending on the polarity of the transistoror the levels of potentials applied to the terminals. In general, in ann-channel transistor, a terminal to which a lower potential is appliedis called a source, and a terminal to which a higher potential isapplied is called a drain. In a p-channel transistor, a terminal towhich a lower potential is applied is called a drain, and a terminal towhich a higher potential is applied is called a source. In thisspecification, although connection relation of the transistor isdescribed assuming that the source and the drain are fixed forconvenience in some cases, actually, the names of the source and thedrain interchange with each other depending on the relation of thepotentials.

Note that in this specification, a “source” of a transistor means asource region that is part of a semiconductor film functioning as anactive layer or a source electrode connected to the semiconductor film.Similarly, a “drain” of a transistor means a drain region that is partof the semiconductor film or a drain electrode connected to thesemiconductor film. A “gate” means a gate electrode.

Note that in this specification, a state in which transistors areconnected to each other in series means, for example, a state in whichonly one of a source and a drain of a first transistor is connected toonly one of a source and a drain of a second transistor. In addition, astate in which transistors are connected in parallel means a state inwhich one of a source and a drain of a first transistor is connected toone of a source and a drain of a second transistor and the other of thesource and the drain of the first transistor is connected to the otherof the source and the drain of the second transistor.

In this specification, the term “connection” means electrical connectionand corresponds to a state where current, voltage, or a potential can besupplied or transmitted. Accordingly, connection means not only directconnection but also indirect connection through a circuit element suchas a wiring, a resistor, a diode, or a transistor so that current, apotential, or voltage can be supplied or transmitted.

In this specification, even when different components are connected toeach other in a circuit diagram, there is actually a case where oneconductive film has functions of a plurality of components such as acase where part of a wiring serves as an electrode. The term“connection” also means such a case where one conductive film hasfunctions of a plurality of components.

Further, in this specification, one of a first electrode and a secondelectrode of a transistor refers to a source electrode and the otherrefers to a drain electrode.

According to one embodiment of the present invention, a novel displaypanel that is highly convenient or reliable can be provided. Accordingto another embodiment of the present invention, a novel input/outputdevice that is highly convenient or reliable can be provided. Accordingto another embodiment of the present invention, a novel data processingdevice that is highly convenient or reliable can be provided. Accordingto another embodiment of the present invention, a method formanufacturing a novel display panel that is highly convenient orreliable can be provided. According to another embodiment of the presentinvention, a novel display panel, a novel input/output device, a noveldata processing device, a novel semiconductor device, or a method formanufacturing a novel display panel can be provided.

Note that the description of these effects does not preclude theexistence of other effects. One embodiment of the present invention doesnot necessarily achieve all the effects listed above. Other effects willbe apparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A, 1B-1, 1B-2, and 1C illustrate a structure of an input/outputdevice of one embodiment.

FIGS. 2A and 2B illustrate a pixel structure of an input/output deviceof one embodiment.

FIGS. 3A to 3C are cross-sectional views illustrating a structure of aninput/output device of one embodiment.

FIG. 4 is a cross-sectional view illustrating a structure of aninput/output device of one embodiment.

FIG. 5 is a circuit diagram illustrating a structure of a pixel circuitof an input/output device of one embodiment.

FIGS. 6A and 6B are block diagrams illustrating a structure of aninput/output device of one embodiment.

FIGS. 7A, 7B-1, and 7B-2 are top views illustrating a structure of aninput/output device of one embodiment.

FIGS. 8A and 8B illustrate a structure of a pixel of an input/outputdevice of one embodiment.

FIGS. 9A to 9C are cross-sectional views illustrating a structure of aninput/output device of one embodiment.

FIG. 10 is a cross-sectional view illustrating a structure of aninput/output device of one embodiment.

FIG. 11 is a circuit diagram illustrating a structure of a pixel circuitof an input/output device of one embodiment.

FIG. 12 is a block diagram illustrating a structure of an input/outputdevice of one embodiment.

FIGS. 13A to 13C are schematic views each illustrating shapes ofreflective films of a display panel of an input/output device of oneembodiment.

FIG. 14 is a flow chart illustrating a method for manufacturing aninput/output device of one embodiment.

FIGS. 15A to 15C are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 16A to 16C are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 17A to 17D are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 18A to 18C are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 19A and 19B are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 20A and 20B are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIG. 21 is a cross-sectional view illustrating a method formanufacturing an input/output device of one embodiment.

FIG. 22 is a cross-sectional view illustrating a method formanufacturing an input/output device of one embodiment.

FIG. 23 is a flow chart illustrating a method for manufacturing aninput/output device of one embodiment.

FIGS. 24A to 24C are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 25A to 25C are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 26A and 26B are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 27A and 27B are cross-sectional views illustrating a method formanufacturing an input/output device of one embodiment.

FIG. 28 is a cross-sectional view illustrating a method formanufacturing an input/output device of one embodiment.

FIG. 29 is a cross-sectional view illustrating a method formanufacturing an input/output device of one embodiment.

FIGS. 30A to 30H illustrate structures of electronic devices of oneembodiment.

FIGS. 31A to 31C illustrate a structure of an input/output device of oneembodiment.

BEST MODE FOR CARRYING OUT THE INVENTION

A display panel of one embodiment of the present invention includes apixel, a third conductive film electrically connected to the pixel, aninsulating film including an opening portion overlapping with the thirdconductive film, and an electrode including a first region in contactwith the third conductive film and a second region functioning as acontact point.

Thus, a signal, electric power, or the like can be supplied to the pixelprotected by the insulating film. As a result, a novel display panelthat is highly convenient or reliable can be provided.

Embodiments will be described in detail with reference to the drawings.Note that the present invention is not limited to the followingdescription. It will be readily appreciated by those skilled in the artthat modes and details of the present invention can be modified invarious ways without departing from the spirit and scope of the presentinvention. Thus, the present invention should not be construed as beinglimited to the description in the following embodiments. Note that instructures of the present invention described below, the same portionsor portions having similar functions are denoted by the same referencenumerals in different drawings, and a description thereof is notrepeated.

Embodiment 1

In this embodiment, a structure of an input/output device of oneembodiment of the present invention will be described with reference toFIGS. 1A, 1B-1, 1B-2, and 1C, FIGS. 2A and 2B, FIGS. 3A to 3C, FIG. 4,FIG. 5, and FIGS. 6A and 6B.

FIGS. 1A, 1B-1, 1B-2, and 1C illustrate a structure of an input/outputdevice of one embodiment of the present invention. FIG. 1A is a top viewof the input/output device of one embodiment of the present invention.FIG. 1B-1 is a schematic view illustrating a part of an input portion ofthe input/output device of one embodiment of the present invention. FIG.1B-2 is a schematic view illustrating a part of FIG. 1B-1. FIG. 1C is aschematic view illustrating a part of a display panel of theinput/output device of one embodiment of the present invention.

FIGS. 2A and 2B illustrate a pixel structure of the input/output deviceof one embodiment of the present invention. FIG. 2A is a top view ofpixels of the input/output device of one embodiment of the presentinvention, and FIG. 2B illustrates a part of FIG. 2A.

FIGS. 3A to 3C and FIG. 4 are cross-sectional views illustrating astructure of the input/output device of one embodiment of the presentinvention. FIG. 3A is a cross-sectional view taken along the cuttingplane lines X1-X2, X3-X4, and X5-X6 in FIG. 1A. FIG. 3B illustrates apart of FIG. 3A. FIG. 3C is a schematic view illustrating a part of FIG.3A.

FIG. 4 is a cross-sectional view taken along the cutting plane linesX7-X8, X9-X10, and X11-X12 in FIG. 1A.

FIG. 5 is a circuit diagram illustrating a structure of pixel circuitsof the input/output device of one embodiment of the present invention.

FIGS. 6A and 6B are block diagrams illustrating a structure of theinput/output device of one embodiment of the present invention. FIG. 6Ais a block diagram illustrating a structure of the display panel of oneembodiment of the present invention. FIG. 6B is a block diagramillustrating a structure of the input portion of the input/output deviceof one embodiment of the present invention.

Structure Example 1 of Input/Output Device

An input/output device 700TP1 described in this embodiment includes thedisplay panel and the input portion (see FIGS. 3A to 3C or FIGS. 6A and6B).

Structure Example of Display Panel

The display panel of the input/output device described in thisembodiment includes a pixel 702(i,j), an insulating film 501C, a thirdconductive film 511B, and an electrode 519B (see FIG. 3A).

The insulating film 501C includes a region overlapping with the pixel702(i,j). The insulating film 501C includes an opening portion 591B.

The third conductive film 511B is electrically connected to the pixel702(i,j). The third conductive film 511B includes a region overlappingwith the insulating film 501C. The third conductive film 511B includes aregion overlapping with the opening portion 591B.

The electrode 519B is electrically connected to the third conductivefilm 511B. The electrode 519B includes a first region 519B1 and a secondregion 519B2 (see FIG. 3C).

The first region 519B1 is in contact with the third conductive film511B. The second region 519B2 functions as a contact point. The openingportion 591B includes a region occupied by the third conductive film511B or the electrode 519B. The third conductive film 511B or theelectrode 519B that occupies a part of the opening portion 591B in theinsulating film 501C can be referred to as through electrode. In otherwords, the third conductive film 511B or the electrode 519B that fills apart of the opening portion 591B can be referred to as throughelectrode. The second region 519B2 has a shape projecting from a surfaceof an insulating film 501A, for example.

The insulating film 501C has a thickness larger than or equal to 0.2 μmand smaller than or equal to 1.5 μm and has a water vapor transmissionrate lower than or equal to 10⁻³ g/(m²·day), preferably lower than orequal to 10⁻⁴ g/(m²·day), more preferably lower than or equal to 10⁻⁵g/(m²·day).

The display panel of the input/output device described in thisembodiment includes a first base 510L and a second base 710L (see FIG.4).

The first base 510L includes a region overlapping with the insulatingfilm 501C. The second base 710L includes a region that is provided sothat the insulating film 501C is positioned between the region of thesecond base 710L and the first base 510L.

The display panel of the input/output device described in thisembodiment includes the pixel, the third conductive film electricallyconnected to the pixel, the insulating film including the openingportion overlapping with the third conductive film, and the electrodeincluding the first region in contact with the third conductive film andthe second region functioning as a contact point. Thus, a signal,electric power, or the like can be supplied to the pixel protected bythe insulating film. As a result, a novel display panel that is highlyconvenient or reliable can be provided.

The display panel of the input/output device described in thisembodiment includes one group of pixels 702(i,1) to 702(i,n), the othergroup of pixels 702(1,j) to 702(m,j), a signal line S2(j), and a scanline G2(i) (see FIG. 6A). Note that i is an integer greater than orequal to 1 and less than or equal to m,j is an integer greater than orequal to 1 and less than or equal to n, and one of m and n is an integergreater than 1.

The one group of pixels 702(i,1) to 702(i,n) include the pixel 702(i,j).The one group of pixels 702(i,1) to 702(i,n) are arranged in a rowdirection (indicated by an arrow R1 in the drawing).

The other group of pixels 702(1,j) to 702(m,j) include the pixel702(i,j). The other group of pixels 702(1,j) to 702(m,j) are arranged ina column direction (indicated by an arrow C1 in the drawing) thatintersects with the row direction.

The scan line G2(i) is electrically connected to the one group of pixels702(i,1) to 702(i,n).

The other group of pixels 702(1,j) to 702(m,j) are electricallyconnected to the signal line S2(j).

The scan line G2(i) or the signal line S2(j) is electrically connectedto the third conductive film 511B.

The display panel of the input/output device described in thisembodiment includes a driver circuit SD (see FIG. 6A). The drivercircuit SD has a function of supplying an image signal. The drivercircuit SD is electrically connected to the second region 519B2. Thesignal line S2(j) is electrically connected to the third conductive film511B.

Note that the electrode 519B can be electrically connected to a flexibleprinted circuit FPC1 using a conductive material ACF1, for example.

The first base 510L and the second base 710L have flexibility (see FIG.3A or FIG. 4).

The pixel 702(i,j) of the display panel of the input/output devicedescribed in this embodiment includes a pixel circuit 530(i,j) and adisplay element 550(i,j).

The pixel circuit 530(i,j) is electrically connected to the signal lineS2(j), and the display element 550(i,j) is electrically connected to thepixel circuit 530(i,j) (see FIG. 3A or FIG. 5).

The display panel of the input/output device described in thisembodiment includes the first base having flexibility, the second basehaving flexibility, the insulating film positioned between the firstbase and the second base, and the display element electrically connectedto the pixel circuit overlapping with the insulating film. Thus, thedisplay element can be bent between the first base and the second base.As a result, a novel display panel that is highly convenient or reliablecan be provided.

The display panel described in this embodiment includes the insulatingfilm 501A (see FIG. 3A or FIG. 4). The insulating film 501A includes anopening portion overlapping with the opening portion 591B and an openingportion overlapping with an opening portion 591C.

The display panel described in this embodiment includes a conductivefilm ANO (see FIGS. 6A and 6B).

The display element 550(i,j) of the display panel described in thisembodiment includes a third electrode 551(i,j), a fourth electrode 552,and a layer 553(j) containing a light-emitting material (see FIG. 3A).Note that the third electrode 551(i,j) is electrically connected to theconductive film ANO, and the fourth electrode 552 is electricallyconnected to a fourth conductive film VCOM2 (see FIG. 5).

The third electrode 551(i,j) is electrically connected to the pixelcircuit 530(i,j) at a connection portion 522 (see FIG. 3A).

The fourth electrode 552 includes a region overlapping with the thirdelectrode 551(i,j). The layer 553(j) containing a light-emittingmaterial includes a region between the third electrode 551(i,j) and thefourth electrode 552.

The display panel described in this embodiment includes a light-blockingfilm BM, an insulating film 771, a functional film 770P. Furthermore,the display panel includes a coloring film CF1 (see FIG. 3A and FIG. 4).

The light-blocking film BM includes an opening portion in a regionoverlapping with the display element 550(i,j).

The coloring film CF1 includes a region between the second base 710L andthe display element 550(i,j) and a region overlapping with the displayelement 550(i,j).

The insulating film 771 includes a region between the coloring film CF1and the display element 550(i,j) or between the light-blocking film BMand the display element 550(i,j). Thus, unevenness due to the thicknessof the coloring film CF1 can be reduced, or impurities can be preventedfrom diffusing from the light-blocking film BM, the coloring film CF1,or the like to the display element 550(i,j).

The functional film 770P includes a region overlapping with the displayelement 550(i,j).

The display panel described in this embodiment includes the first base510L, the second base 710L, and a functional layer 520.

The second base 710L includes a region overlapping with the first base510L. The second base 710L includes an insulating film 710A, a base710B, and a bonding layer 710C. The insulating film 710A includes aregion overlapping with the base 710B, and the bonding layer 710Cincludes a region between the insulating film 710A and the base 710B.

The first base 510L includes a base 510B and a bonding layer 510C. Thebonding layer 510C includes a region overlapping with the base 510B.

The functional layer 520 includes a region between the first base 510Land the second base 710L. The functional layer 520 includes the pixelcircuit 530(i,j), display element 550(i,j), an insulating film 521, andan insulating film 528. The functional layer 520 includes an insulatingfilm 518 and an insulating film 516 (see FIGS. 3A and 3B).

The insulating film 521 includes a region between the pixel circuit530(i,j) and the display element 550(i,j).

The insulating film 528 includes a region between the insulating film521 and the second base 710L. The insulating film 528 includes anopening portion in a region overlapping with the display element550(i,j).

The insulating film 528 formed along the periphery of the thirdelectrode 551(i,j) prevents a short circuit between the third electrode551(i,j) and the fourth electrode.

The insulating film 518 includes a region between the insulating film521 and the pixel circuit 530(i,j). The insulating film 516 includes aregion between the insulating film 518 and the pixel circuit 530(i,j)(see FIG. 3B).

A bonding layer 709 includes a region between the functional layer 520and the second base 710L and has a function of bonding the functionallayer 520 and the second base 710L to each other.

An electrode 519C is electrically connected to a conductive film 511C(see FIG. 4). The electrode 519C includes a first region and a secondregion. The first region is in contact with the conductive film 511C,and the second region functions as a contact point. The opening portion591C includes a region occupied by the conductive film 511C or theelectrode 519C. The second region has a shape projecting from thesurface of the insulating film 501A, for example.

The display panel described in this embodiment includes a driver circuitGD and the driver circuit SD (see FIGS. 1A, 1B-1, 1B-2, and 1C and FIGS.6A and 6B).

The driver circuit GD is electrically connected to the scan line G2(i).The driver circuit GD includes a transistor MD, for example (see FIG.3A). Specifically, a semiconductor film that can be formed in the sameprocess as the semiconductor film of the transistor included in thepixel circuit 530(i,j) can be used for the transistor MD.

Structure Example of Input Portion

The input portion of the input/output device described in thisembodiment includes a region overlapping with the display panel (seeFIG. 1A, FIG. 3A, and FIG. 4).

The input portion includes a control line CL(g), a sensing signal lineML(h), and a sensing element 775(g,h) (see FIG. 1B-2).

The sensing element 775(g,h) is electrically connected to the controlline CL(g) and the sensing signal line ML(h).

The control line CL(g) has a function of supplying a control signal.

The sensing element 775(g,h) receives the control signal and has afunction of supplying the control signal and a sensor signal whichchanges in accordance with a distance between the sensing element775(g,h) and an object approaching the region overlapping with thedisplay panel.

The sensing signal line ML(h) has a function of being supplied with thesensing signal.

The sensing element 775(g,h) has a light-transmitting property. Thesensing element 775(g,h) includes a first electrode C(g) and a secondelectrode M(h).

The first electrode C(g) is electrically connected to the control lineCL(g). The second electrode M(h) is electrically connected to thesensing signal line ML(h), and the second electrode M(h) is provided sothat an electric field which is partly blocked by the object thatapproaches the region overlapping with the display panel is generatedbetween the second electrode M(h) and the first electrode C(g).

Thus, the object that approaches the region overlapping with the displaypanel can be sensed while image data is displayed by the display panel.As a result, a novel input/output device that is highly convenient orreliable can be provided.

The input portion described in this embodiment includes a region betweenthe second base 710L and the bonding layer 709 (see FIG. 3A or FIG. 4).

The input portion described in this embodiment includes the functionalfilm 770P. The functional film 770P is provided so that the sensingelement 775(g,t) is positioned between the functional film 770P and thedisplay element 550(i,j). Thus, the intensity of light reflected by thesensing element 775(g,t) can be reduced, for example.

The input portion described in this embodiment includes one group ofsensing elements 775(g,1) to 775(g,q) and the other group of sensingelements 775(1,h) to 775(p,h) (see FIG. 6B). Note that g is an integergreater than or equal to 1 and less than or equal to p, h is an integergreater than or equal to 1 and less than or equal to q, and each of pand q is an integer greater than or equal to 1.

The one group of sensing elements 775(g,1) to 775(g,q) include thesensing element 775(g,h). The one group of sensing elements 775(g,1) to775(g,q) are arranged in a row direction (the direction indicated by anarrow R2 in the drawing). Note that the direction indicated by the arrowR2 in FIG. 6B may be the same as or different from the directionindicated by the arrow R1 in FIG. 6A.

The other group of sensing elements 775(1,h) to 775(p,h) include thesensing element 775(g,h) and are arranged in a column direction (thedirection indicated by an arrow C2 in the drawing) that intersects withthe row direction.

The one group of sensing elements 775(g,1) to 775(g,q) arranged in therow direction include the electrode C(g) that is electrically connectedto the control line CL(g).

The other group of sensing elements 775(1,h) to 775(p,h) arranged in thecolumn direction include the electrode M(h) that is electricallyconnected to the sensing signal line ML(h).

The control line CL(g) of the input/output device described in thisembodiment includes a conductive film BR(g,h) (see FIG. 3A). Theconductive film BR(g,h) includes a region overlapping with the sensingsignal line ML(h).

An insulating film 706 includes a region between the sensing signal lineML(h) and the conductive film BR(g,h). Thus, a short circuit between thesensing signal line ML(h) and the conductive film BR(g,h) can beavoided.

The input/output device described in this embodiment includes anoscillator circuit OSC and a sensor circuit DC (see FIG. 6B).

The oscillator circuit OSC is electrically connected to the control lineCL(g). The oscillator circuit OSC has a function of supplying a controlsignal. For the control signal, a rectangular wave, a sawtooth wave, atriangular wave, or the like can be used.

The sensor circuit DC is electrically connected to the sensing signalline ML(h). The sensor circuit DC has a function of supplying a sensingsignal in accordance with a change in the potential of the sensingsignal line ML(h).

The input portion described in this embodiment includes a functionallayer 720.

The functional layer 720 includes a region between the display element550(i,j) and the base 710L. The functional layer 720 includes thesensing element 775(g,h) and the insulating film 706.

The input portion described in this embodiment includes a terminal 719,an electrode 552C, and a conductive material CP (see FIG. 4).

The terminal 719 is electrically connected to the control line CL(g) orthe sensing signal line ML(h). The electrode 552C is electricallyconnected to the conductive film 511C. The conductive material CPincludes a region between the terminal 719 and the conductive film 511C.The terminal 719 and the conductive film 511C are electrically connectedto each other using the conductive material CP.

Note that the terminal 719 can be electrically connected to a flexibleprinted circuit FPC2 using a conductive material ACF2, for example (seeFIG. 4).

Components constituting the input/output device will be described below.Note that these components cannot be clearly distinguished and onecomponent may also serve as another component or include part of anothercomponent.

Structure Example

The input/output device of one embodiment of the present inventionincludes the display panel or the input portion.

The display panel of one embodiment of the present invention includesthe base 510L, the base 710L, or the bonding layer 709.

The display panel of one embodiment of the present invention includesthe functional layer 520, the insulating film 521, or the insulatingfilm 528.

The display panel of one embodiment of the present invention includesthe signal line S2(j), the scan line G2(i), or the conductive film ANO.

The display panel of one embodiment of the present invention includesthe electrode 519B, the electrode 519C, the conductive film 511B, or theconductive film 511C.

The display panel of one embodiment of the present invention includesthe pixel circuit 530(i,j) or a switch SW2.

The display panel of one embodiment of the present invention includesthe coloring film CF1, the light-blocking film BM, the insulating film771, or the functional film 770P.

The display panel of one embodiment of the present invention includesthe display element 550(i,j), the third electrode 551(i,j), the fourthelectrode 552, or the layer 553(j) containing a light-emitting material.

The display panel of one embodiment of the present invention includesthe insulating film 501A and the insulating film 501C.

The display panel of one embodiment of the present invention includesthe driver circuit GD or the driver circuit SD.

Base 510L

The base 510L or the like can be formed using a material having heatresistance high enough to withstand heat treatment in the manufacturingprocess. For example, a material with a thickness of more than or equalto 0.1 mm and less than or equal to 0.7 mm can be used as the base 510L.Specifically, a material polished to a thickness of approximately 0.1 mmcan be used.

For example, a large-sized glass substrate having any of the followingsizes can be used as the base 510L or the like the 6th generation (1500mm×1850 mm), the 7th generation (1870 mm×2200 mm), the 8th generation(2200 mm×2400 mm), the 9th generation (2400 mm×2800 mm), and the 10thgeneration (2950 mm×3400 mm). Thus, a large-sized display device can bemanufactured.

For the base 510L or the like, an organic material, an inorganicmaterial, a composite material of an organic material and an inorganicmaterial, or the like can be used. For example, an inorganic materialsuch as glass, ceramic, or metal can be used for the base 510L or thelike.

Specifically, non-alkali glass, soda-lime glass, potash glass, crystalglass, aluminosilicate glass, tempered glass, chemically tempered glass,quartz, sapphire, or the like can be used for the base 510L or the like.Specifically, an inorganic oxide film, an inorganic nitride film, aninorganic oxynitride film, or the like can be used for the base 510L orthe like. For example, a silicon oxide film, a silicon nitride film, asilicon oxynitride film, an aluminum oxide film, or the like can be usedfor the base 510L or the like. Stainless steel, aluminum, or the likecan be used for the base 510L or the like.

For example, a single crystal semiconductor substrate or apolycrystalline semiconductor substrate of silicon or silicon carbide, acompound semiconductor substrate of silicon germanium or the like, anSOI substrate, or the like can be used for the base 510L or the like.Thus, a semiconductor element can be provided over the base 510L or thelike.

For example, an organic material such as a resin, a resin film, orplastic can be used for the base 510L or the like. Specifically, a resinfilm or a resin plate of polyester, polyolefin, polyamide, polyimide,polycarbonate, an acrylic resin, or the like can be used for the base510L or the like.

For example, a stacked-layer material having flexibility can be used forthe base 510L. Specifically, a stacked-layer material in which thebonding layer 510C and the base 510B are stacked can be used for thebase 510L. Note that the bonding layer 510C has a function of bondingthe insulating film 501A and the base 510B to each other.

For example, a composite material formed by attaching a metal plate, athin glass plate, or a film of an inorganic material to a resin film orthe like can be used for the base 510L or the like. For example, acomposite material formed by dispersing a fibrous or particulate metal,glass, an inorganic material, or the like into a resin film can be usedfor the base 510L or the like. For example, a composite material formedby dispersing a fibrous or particulate resin, an organic material, orthe like into an inorganic material can be used for the base 510L or thelike.

Furthermore, a single-layer material or a layered material in which aplurality of layers are stacked can be used for the base 510L or thelike. For example, a layered material in which a base, an insulatingfilm that prevents diffusion of impurities contained in the base, andthe like are stacked can be used for the base 510L or the like.Specifically, a layered material in which glass and one or a pluralityof films that are selected from a silicon oxide layer, a silicon nitridelayer, a silicon oxynitride layer, and the like and that preventdiffusion of impurities contained in the glass are stacked can be usedfor the base 510L or the like. Alternatively, a layered material inwhich a resin and a film for preventing diffusion of impurities thatpenetrate the resin, such as a silicon oxide film, a silicon nitridefilm, or a silicon oxynitride film, are stacked can be used for the base510L or the like.

Specifically, a resin film, a resin plate, a layered material, or thelike of polyester, polyolefin, polyamide, polyimide, polycarbonate, anacrylic resin, or the like can be used for the base 510L or the like.

Specifically, a material including polyester, polyolefin, polyamide(e.g., nylon or aramid), polyimide, polycarbonate, polyurethane, anacrylic resin, an epoxy resin, or a resin having a siloxane bond, suchas silicone, can be used for the base 510L or the like.

Specifically, polyethylene terephthalate (PET), polyethylene naphthalate(PEN), polyethersulfone (PES), an acrylic resin, or the like can be usedfor the base 510L or the like.

Alternatively, paper, wood, or the like can be used for the base 510L orthe like.

For example, a flexible substrate can be used for the base 510L or thelike.

Note that a transistor, a capacitor, or the like can be directly formedon the substrate. Alternatively, a transistor, a capacitor, or the likecan be formed on a substrate which is for use in the manufacturingprocess and can withstand heat applied in the manufacturing process, andthen the transistor, the capacitor, or the like can be transferred tothe base 510L or the like. Thus, a transistor, a capacitor, or the likecan be formed over a flexible substrate, for example.

Base 710L

For example, a light-transmitting material can be used for the base710L. Specifically, any of the materials that can be used for the base510L can be used for the base 710L.

For example, aluminosilicate glass, tempered glass, chemically temperedglass, sapphire, or the like can be favorably used for the base 710Lthat is provided on the user side of the display panel. This can preventdamage or a crack of the display panel caused by the use thereof.

Moreover, a material having a thickness of more than or equal to 0.1 mmand less than or equal to 0.7 mm, for example, can be used for the base710L. Specifically, a substrate polished for reducing the thickness canbe used.

For example, a stacked-layer material having flexibility can be used forthe base 710L. Specifically, a stacked-layer material in which theinsulating film 710A and the base 710B are bonded to each other usingthe bonding layer 710C can be used for the base 710L.

Bonding Layer 709

For the bonding layer 709 or the like, an inorganic material, an organicmaterial, a composite material of an inorganic material and an organicmaterial, or the like can be used.

For example, an organic material such as a resin having thermalfusibility or a curable resin can be used for the bonding layer 709 orthe like.

For example, an organic material, such as a reactive curable adhesive, alight curable adhesive, a thermosetting adhesive, and/or an anaerobicadhesive, can be used for the bonding layer 709 or the like.

Specifically, an adhesive containing an epoxy resin, an acrylic resin, asilicone resin, a phenol resin, a polyimide resin, an imide resin, apolyvinyl chloride (PVC) resin, a polyvinyl butyral (PVB) resin, or anethylene vinyl acetate (EVA) resin, or the like can be used for thebonding layer 709 or the like.

Insulating Film 521

For example, an insulating inorganic material, an insulating organicmaterial, an insulating composite material containing an inorganicmaterial and an organic material, or the like can be used for theinsulating film 521 or the like.

Specifically, for example, an inorganic oxide film, an inorganic nitridefilm, an inorganic oxynitride film, or a material obtained by stackingany of these films and the like can be used for the insulating film 521or the like. For example, a film including any of a silicon oxide film,a silicon nitride film, a silicon oxynitride film, an aluminum oxidefilm, and the like, or a film including a material obtained by stackingany of these films can be used for the insulating film 521 or the like.

Specifically, polyester, polyolefin, polyamide, polyimide,polycarbonate, polysiloxane, an acrylic resin, or the like, or a layeredor composite material of a plurality of kinds of resins selected fromthese can be used for the insulating film 521 or the like.Alternatively, a photosensitive material may be used.

Thus, steps due to various components overlapping with the insulatingfilm 521, for example, can be reduced.

Insulating Film 528

For example, any of the materials that can be used for the insulatingfilm 521 can be used for the insulating film 528 or the like.Specifically, a 1-μm-thick polyimide-containing film can be used as theinsulating film 528.

Insulating Film 501A

For example, any of the materials that can be used for the insulatingfilm 521 can be used for the insulating film 501A. For example, amaterial having a function of supplying hydrogen can be used for theinsulating film 501A.

Specifically, a material obtained by stacking a material containingsilicon and oxygen and a material containing silicon and nitrogen can beused for the insulating film 501A. For example, a material having afunction of releasing hydrogen by heating or the like to supply thehydrogen to another component can be used for the insulating film 501A.Specifically, a material having a function of releasing hydrogen takenin the manufacturing process, by heating or the like, to supply thehydrogen to another component can be used for the insulating film 501A.

For example, a film containing silicon and oxygen that is formed by achemical vapor deposition method using silane or the like as a sourcegas can be used as the insulating film 501A.

Specifically, a material obtained by stacking a material containingsilicon and oxygen and having a thickness of more than or equal to 200nm and less than or equal to 600 nm and a material containing siliconand nitrogen and having a thickness of approximately 200 nm can be usedfor the insulating film 501A.

For example, a material in which a 600-nm-thick material containingsilicon and oxygen and a 200-nm-thick material containing silicon andnitrogen are stacked can be used for the insulating film 501A. Asanother example, a material in which a 600-nm-thick material containingsilicon and oxygen and a 280-nm-thick material containing silicon andnitrogen are stacked can be used for the insulating film 501A.

Insulating Film 501C

For example, any of the materials that can be used for the insulatingfilm 521 can be used for the insulating film 501C. Specifically, amaterial containing silicon and oxygen can be used for the insulatingfilm 501C. Thus, diffusion of impurities into the pixel circuit, thedisplay element, or the like can be suppressed.

For example, a 200-nm-thick film containing silicon, oxygen, andnitrogen can be used as the insulating film 501C. For example, amaterial in which a 600-nm-thick film containing silicon, oxygen, andnitrogen, a 200-nm-thick film containing silicon and nitrogen, and a350-nm-thick film containing silicon and nitrogen are stacked can beused as the insulating film 501C.

As another example, a 200-nm-thick film containing silicon, oxygen, andnitrogen, a 100-nm-thick film containing silicon and nitrogen, and a100-nm-thick film containing silicon, oxygen, and nitrogen are stackedcan be used as the insulating film 501C.

As another example, a 180-nm-thick film containing silicon, oxygen, andnitrogen, a 140-nm-thick film containing silicon and nitrogen, and a215-nm-thick film containing silicon, oxygen, and nitrogen are stackedcan be used as the insulating film 501C.

Wiring, Electrode, Terminal, and Conductive Film

A conductive material can be used for the wiring or the like.Specifically, the conductive material can be used for the signal lineS2(j), the scan line G2(i), the conductive film ANO, the electrode 519B,the electrode 519C, the terminal 719, the conductive film 511B, theconductive film 511C, or the like.

For example, an inorganic conductive material, an organic conductivematerial, a metal, conductive ceramics, or the like can be used for thewiring or the like.

Specifically, a metal element selected from aluminum, gold, platinum,silver, copper, chromium, tantalum, titanium, molybdenum, tungsten,nickel, iron, cobalt, palladium, and manganese can be used for thewiring or the like. Alternatively, an alloy including any of theabove-described metal elements, or the like can be used for the wiringor the like. In particular, an alloy of copper and manganese is suitablyused in microfabrication with the use of a wet etching method.

Specifically, any of the following structures can be used for the wiringor the like: a two-layer structure in which a titanium film is stackedover an aluminum film, a two-layer structure in which a titanium film isstacked over a titanium nitride film, a two-layer structure in which atungsten film is stacked over a titanium nitride film, a two-layerstructure in which a tungsten film is stacked over a tantalum nitridefilm or a tungsten nitride film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, and the like.

Specifically, a conductive oxide, such as indium oxide, indium tinoxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium isadded, can be used for the wiring or the like.

Specifically, a film containing graphene or graphite can be used for thewiring or the like.

For example, a film including graphene oxide is formed and is subjectedto reduction, so that a film including graphene can be formed. As areducing method, a method with application of heat, a method using areducing agent, or the like can be employed.

For example, a film including a metal nanowire can be used for thewiring or the like. Specifically, a nanowire including silver can beused.

Specifically, a conductive high molecule can be used for the wiring orthe like.

Pixel Circuit 530(i,j)

The pixel circuit 530(i,j) is electrically connected to the signal lineS2(j), the scan line G2(i), and the conductive film ANO (see FIG. 5).

The pixel circuit 530(i,j) includes the switch SW2, a transistor M, anda capacitor C12.

For example, a transistor including a gate electrode electricallyconnected to the scan line G2(i) and a first electrode electricallyconnected to the signal line S2(j) can be used as the switch SW2.

The transistor M includes a gate electrode electrically connected to thesecond electrode of the transistor used as the switch SW2 and includes afirst electrode electrically connected to the conductive film ANO.

A transistor including a conductive film having a region that isprovided so that a semiconductor film is provided between the region anda gate electrode can be used as the transistor M. For example, aconductive film electrically connected to a wiring that can supply apotential the same as that of the gate electrode of the transistor M canbe used as the conductive film.

The capacitor C12 includes a first electrode electrically connected to asecond electrode of the transistor used as the switch SW2 and a secondelectrode electrically connected to the first electrode of thetransistor M.

Note that the third electrode and the fourth electrode of the displayelement 550(i,j) are electrically connected to the second electrode ofthe transistor M and the fourth conductive film VCOM2, respectively.This enables the display element 550(i,j) to be driven.

Switch SW2, Transistor M, and Transistor MD

For example, a bottom-gate or top-gate transistor or the like can beused as the switch SW2, the transistor M, the transistor MD, or thelike.

For example, a transistor including a semiconductor containing anelement belonging to Group 14 in a semiconductor film can be used.Specifically, a semiconductor containing silicon can be used for asemiconductor film. For example, a transistor including single crystalsilicon, polysilicon, microcrystalline silicon, amorphous silicon, orthe like in a semiconductor film can be used.

For example, a transistor including an oxide semiconductor in asemiconductor film can be used. Specifically, an oxide semiconductorcontaining indium or an oxide semiconductor containing indium, gallium,and zinc can be used for a semiconductor film.

The transistor M includes a semiconductor film 508 and a conductive film504 including a region overlapping with the semiconductor film 508 (seeFIG. 3B). The transistor M includes the conductive film 512A and theconductive film 512B that are electrically connected to thesemiconductor film 508.

Note that the conductive film 504 and the insulating film 506 serve as agate electrode and a gate insulating film, respectively. The conductivefilm 512A has one of a function of a source electrode and a function ofa drain electrode, and the conductive film 512B has the other.

A transistor including a conductive film 524 having a region that isprovided so that the semiconductor film 508 is positioned between theregion and the conductive film 504 can be used as the transistor M.

A conductive film in which a 10-nm-thick film containing tantalum andnitrogen and a 300-nm-thick film containing copper are stacked in thisorder can be used as the conductive film 504, for example.

A material in which a 400-nm-thick film containing silicon and nitrogenand a 200-nm-thick film containing silicon, oxygen, and nitrogen arestacked can be used for the insulating film 506, for example.

A 25-nm-thick film containing indium, gallium, and zinc can be used asthe semiconductor film 508, for example.

A conductive film in which a 50-nm-thick film containing tungsten, a400-nm-thick film containing aluminum, and a 100-nm-thick filmcontaining titanium are stacked in this order can be used as theconductive film 512A or the conductive film 512B, for example.

Light-Blocking Film BM

The light-blocking film BM can be formed of a material that preventslight transmission and can thus be used as a black matrix, for example.

Insulating Film 771

The insulating film 771 can be formed of polyimide, an epoxy resin, anacrylic resin, or the like, for example.

Functional Film 770P

For example, an anti-reflection film, a polarizing film, a retardationfilm, a light diffusion film, a condensing film, or the like can be usedas the functional film 770P.

Alternatively, an antistatic film preventing the attachment of a foreignsubstance, a water repellent film suppressing the attachment of stain, ahard coat film suppressing a scratch in use, or the like can be used asthe functional film 770P.

Specifically, a circularly polarizing film can be used as the functionalfilm 770P.

Display Element 550(i,j)

For example, the display element 550(i,j) can be a light-emittingelement. Specifically, an organic electroluminescent element, aninorganic electroluminescent element, a light-emitting diode, or thelike can be used as the display element 550(i,j).

For example, a light-emitting organic compound can be used for the layer553(j) containing a light-emitting material.

For example, quantum dots can be used for the layer 553(j) containing alight-emitting material. Accordingly, the half width becomes narrow, andlight of a bright color can be emitted.

For example, a layered material for emitting blue light, green light, orred light, or the like can be used for the layer 553(j) containing alight-emitting material.

For example, a belt-like layered material that extends in the columndirection along the signal line S2(j) can be used for the layer 553(j)containing a light-emitting material.

Alternatively, a layered material for emitting white light can be usedfor the layer 553(j) containing a light-emitting material. Specifically,a layered material in which a layer containing a light-emitting materialinducting a fluorescent material that emits blue light, and a layercontaining a material that is other than a fluorescent material and thatemits green light and/or red light or a layer containing a material thatis other than a fluorescent material and that emits yellow light arestacked can be used for the layer 553(j) containing a light-emittingmaterial.

For example, a material that can be used for the wiring or the like canbe used for the third electrode 551(i,j).

For example, a material that reflects visible light and is selected frommaterials capable of being used for the wiring or the like can be usedfor the third electrode 551(i,j).

For example, a material that can be used for the wiring or the like canbe used for the fourth electrode 552. Specifically, a material thattransmits visible light can be used for the fourth electrode 552.

More specifically, conductive oxide, indium-containing conductive oxide,indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zincoxide to which gallium is added, or the like can be used for the thirdelectrode 551(i,j). Alternatively, a metal film that is thin enough totransmit light can be used as the third electrode 551(i,j). Furtheralternatively, a metal film that transmits part of light and reflectsanother part of light can be used for the third electrode 551(i,j).Thus, the display element 550(i,j) can be provided with a microcavitystructure. Consequently, light of a predetermined wavelength can beextracted more efficiently than light of the other wavelengths.

Driver Circuit GD

Any of a variety of sequential circuits, such as a shift register, canbe used as the driver circuit GD. For example, the transistor MD, acapacitor, and the like can be used in the driver circuit GD.Specifically, a transistor that includes a semiconductor film and can beformed in the same process as the transistor M can be used as thetransistor MD. For example, a transistor having the same structure asthe transistor M can be used as the transistor MD. Alternatively, atransistor having a structure different from that of the transistor Mcan be used as the transistor MD.

Driver Circuit SD

The driver circuit SD has a function of supplying an image signal.

For example, any of a variety of sequential circuits, such as a shiftregister, can be used as the driver circuit SD. Specifically, anintegrated circuit formed over a silicon substrate can be used as thedriver circuit SD.

For example, the driver circuit SD can be mounted on the electrode 519Bby a chip on glass (COG) method. Specifically, an anisotropic conductivefilm can be used to mount an integrated circuit on the electrode 519B.Alternatively, a chip on film (COF) may be used to mount an integratedcircuit on the electrode 519B.

Method for Controlling Resistivity of Oxide Semiconductor Film

A method for controlling the resistivity of an oxide semiconductor filmwill be described.

An oxide semiconductor film with a certain resistivity can be used asthe semiconductor film 508, the conductive film 524, or the like.

For example, a method for controlling the concentration of impuritiessuch as hydrogen and water contained in the oxide semiconductor filmand/or the oxygen vacancies in the film can be used as the method forcontrolling the resistivity of an oxide semiconductor film.

Specifically, plasma treatment can be used as a method for increasing ordecreasing the concentration of impurities such as hydrogen and waterand/or the oxygen vacancies in the film.

Specifically, plasma treatment using a gas containing one or more kindsselected from a rare gas (He, Ne, Ar, Kr, or Xe), hydrogen, boron,phosphorus, and nitrogen can be employed. For example, plasma treatmentin an Ar atmosphere, plasma treatment in a mixed gas atmosphere of Arand hydrogen, plasma treatment in an ammonia atmosphere, plasmatreatment in a mixed gas atmosphere of Ar and ammonia, or plasmatreatment in a nitrogen atmosphere can be employed. Thus, the oxidesemiconductor film can have a high carrier density and a lowresistivity.

Alternatively, hydrogen, boron, phosphorus, or nitrogen is added to theoxide semiconductor film by an ion implantation method, an ion dopingmethod, a plasma immersion ion implantation method, or the like, so thatthe oxide semiconductor film can have a low resistivity.

Alternatively, an insulating film containing hydrogen is formed incontact with the oxide semiconductor film, and the hydrogen is diffusedfrom the insulating film to the oxide semiconductor film, so that theoxide semiconductor film can have a high carrier density and a lowresistivity.

For example, an insulating film with a hydrogen concentration of greaterthan or equal to 1×10²² atoms/cm³ is formed in contact with the oxidesemiconductor film, whereby hydrogen can be effectively supplied to theoxide semiconductor film. Specifically, a silicon nitride film can beused as the insulating film formed in contact with the oxidesemiconductor film.

Hydrogen contained in the oxide semiconductor film reacts with oxygenbonded to a metal atom to be water, and an oxygen vacancy is formed in alattice from which oxygen is released (or a portion from which oxygen isreleased). Due to entry of hydrogen into the oxygen vacancy, an electronserving as a carrier is generated in some cases. Furthermore, bonding ofpart of hydrogen to oxygen bonded to a metal atom causes generation ofan electron serving as a carrier in some cases. Thus, the oxidesemiconductor film can have a high carrier density and a lowresistivity.

Specifically, an oxide semiconductor with a hydrogen concentrationmeasured by secondary ion mass spectrometry (SIMS) of greater than orequal to 8×10¹⁹ atoms/cm³, preferably greater than or equal to 1×10²⁰atoms/cm³, further preferably greater than or equal to 5×10²⁰ atoms/cm³can be suitably used for the conductive film 524.

Meanwhile, an oxide semiconductor with a high resistivity can be usedfor a semiconductor film where a channel of a transistor is formed,specifically, the semiconductor film 508.

For example, an insulating film containing oxygen, in other words, aninsulating film capable of releasing oxygen, is formed in contact withan oxide semiconductor film, and the oxygen is supplied from theinsulating film to the oxide semiconductor film, so that oxygenvacancies in the film or at the interface can be filled. Thus, the oxidesemiconductor film can have a high resistivity.

For example, a silicon oxide film or a silicon oxynitride film can beused as the insulating film capable of releasing oxygen.

The oxide semiconductor film in which oxygen vacancies are filled andthe hydrogen concentration is reduced can be referred to as a highlypurified intrinsic or substantially highly purified intrinsic oxidesemiconductor film. The term “substantially intrinsic” refers to thestate in which an oxide semiconductor film has a carrier density lowerthan 8×10¹¹/cm³, preferably lower than 1×10¹¹/cm³, further preferablylower than 1×10¹⁰/cm³. A highly purified intrinsic or substantiallyhighly purified intrinsic oxide semiconductor film has few carriergeneration sources and thus can have a low carrier density. The highlypurified intrinsic or substantially highly purified intrinsic oxidesemiconductor film has a low density of defect states and accordinglycan have a low density of trap states.

Furthermore, a transistor including the highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor film has anextremely low off-state current; even when an element has a channelwidth of 1×10⁶ μm and a channel length L of 10 μm, the off-state currentcan be lower than or equal to the measurement limit of a semiconductorparameter analyzer, that is, lower than or equal to 1×10⁻¹³ A, at avoltage (drain voltage) between a source electrode and a drain electrodeof from 1 V to 10 V.

The transistor in which a channel region is formed in the oxidesemiconductor film that is a highly purified intrinsic or substantiallyhighly purified intrinsic oxide semiconductor film can have a smallchange in electrical characteristics and high reliability.

Specifically, an oxide semiconductor whose hydrogen concentrationmeasured by secondary ion mass spectrometry (SIMS) is lower than orequal to 2×10²⁰ atoms/cm³, preferably lower than or equal to 5×10¹⁹atoms/cm³, further preferably lower than or equal to 1×10¹⁹ atoms/cm³,further preferably lower than 5×10¹⁸ atoms/cm³, further preferably lowerthan or equal to 1×10¹⁸ atoms/cm³, further preferably lower than orequal to 5×10¹⁷ atoms/cm³, further preferably lower than or equal to1×10¹⁶ atoms/cm³ can be favorably used as a semiconductor where achannel of a transistor is formed.

Note that an oxide semiconductor film that has a higher hydrogenconcentration and/or a larger amount of oxygen vacancies and that has alower resistivity than the semiconductor film 508 is used as theconductive film 524.

A film whose hydrogen concentration is twice or more, preferably tentimes or more that of the semiconductor film 508 can be used as theconductive film 524.

A film whose resistivity is greater than or equal to 1×10⁻⁸ times andless than 1×10⁻¹ times that of the semiconductor film 508 can be used asthe conductive film 524.

Specifically, a film whose resistivity is higher than or equal to 1×10⁻³Ωcm and lower than 1×10⁴ Ωcm, preferably higher than or equal to 1×10⁻³Ωcm and lower than 1×10⁻¹ Ωcm can be used as the conductive film 524.

Sensing Element 775(g,h)

As the sensing element 775(g,h), an element that senses electrostaticcapacitance, illuminance, magnetic force, a radio wave, pressure, or thelike and supplies data based on the sensed physical value can be used,for example.

Specifically, a capacitor, a photoelectric conversion element, amagnetic sensing element, a piezoelectric element, a resonator, or thelike can be used as the sensing element 775(g,h).

When a finger or the like having a higher dielectric constant than thatof the air approaches a conductive film in the air, for example,electrostatic capacitance between the finger or the like and theconductive film changes. This electrostatic capacitance change can besensed, and the sensed data can be supplied. Specifically, aself-capacitive sensing element can be used.

The electrode C(g) and the electrode M(h) can be used for the sensingelement, for example. Specifically, the electrode C(g) to which acontrol signal is supplied and the electrode M(h) that is positioned sothat an electric field which is partly blocked by an approaching objectis generated between the electrode M(h) and the electrode C(g) can beused. Thus, the electric field that is changed when blocked by theapproaching object can be sensed using the potential of the sensingsignal line ML(h), and a sensing signal can be supplied. As a result,the approaching object that blocks the electric field can be sensed.Specifically, a mutual capacitive sensing element can be used.

Control Line CL(g), Sensing Signal Line ML(h), and Conductive FilmBR(g,h)

A material having a viable-light transmitting property and conductivitycan be used for the control line CL(g), the sensing signal line ML(h),or the conductive film BR(g,h). For example, a material having avisible-light transmitting property that is selected from materialscapable of being used as wirings and the like can be used for thecontrol line CL(g), the sensing signal line ML(h), or the conductivefilm BR(g,h).

For example, a conductive oxide, a metal film thin enough to transmitlight, or a metal nanowire can be used for the control line CL(g), thesensing signal line ML(h), or the conductive film BR(g,h).

Specifically, a conductive oxide containing indium can be used for thecontrol line CL(g), the sensing signal line ML(h), or the conductivefilm BR(g,h). A metal thin film with a thickness of 1 nm or more and 10nm or less can be used for the control line CL(g), the sensing signalline ML(h), or the conductive film BR(g,h). A metal nanowire containingsilver can be used for the control line CL(g), the sensing signal lineML(h), or the conductive film BR(g,h).

Specifically, indium oxide, indium tin oxide, indium zinc oxide, zincoxide, zinc oxide to which gallium is added, zinc oxide to whichaluminum is added, or the like can be used for the control line CL(g),the sensing signal line ML(h), or the conductive film BR(g,h).

Insulating Film 706

Any of the materials that can be used for the insulating film 521 can beused for the insulating film 706 or the like, for example. Specifically,a film containing silicon and oxygen can be used for the insulating film706.

Structure Example 2 of Input/Output Device

A structure of an input/output device of one embodiment of the presentinvention will be described with reference to FIGS. 31A to 31C.

FIGS. 31A to 31C illustrate a structure of an input/output device 800TP1of one embodiment of the present invention. A projection view shown inFIG. 31A illustrates a structure of the input/output device that isbent. A cross-sectional view shown in FIG. 31B illustrates across-sectional structure taken along the cutting plane line Y1-Y2 inFIG. 31A. A cross-sectional view shown in FIG. 31C illustrates adetailed structure of a flexible region of the input/output device.

The input/output device 800TP1 described in this embodiment includes adisplay panel, an input portion, and a housing 820 (see FIG. 31A).

The input portion includes a region overlapping with the display panel,and the region includes a region 801 having flexibility. Theinput/output device 700TP1 described above can be used for the displaypanel and the input portion, for example.

The housing 820 has a function of bending the region 801 so that acurved surface with a curvature radius of R (mm) or more is provided inthe region 801 (see FIG. 31B). The housing 820 includes, for example, acomponent 821, a component 822, and a hinge portion 823 (see FIG. 31A).The hinge portion 823 has a function of rotatably connecting thecomponent 822 to the component 821. The hinge portion 823 has a functionof forming the curved surface with a curvature radius of R or more inthe region 801 overlapping with the hinge portion 823.

Note that the component 821 and the component 822 can have a shape thatallows the component 821 and the component 822 to come in contact witheach other in a state where the hinge portion 823 is bent so that theregion 801 has a curved surface with a curvature radius of R (mm), forexample. With the use of the shape, formation of a curved surface with acurvature radius less than R (mm) in the region 801 can be prevented. Asa result, a novel display panel that is highly convenient or reliablecan be provided. Furthermore, the input/output device 700TP1 can beprevented from being broken by excessive folding with an extremely smallcurvature radius. Still furthermore, for example, a folding andunfolding operation of the input/output device 800TP1 can be repeated100,000 times or more.

The region 801 includes the functional layer 520, the functional layer720, and the bonding layer 709 (see FIG. 31C). The functional layer 520can include, for example, the display element 550(i,j). The functionallayer 720 can include, for example, the coloring film CF1 or the sensingelement 775(g,h).

The functional layer 720 includes a region overlapping with thefunctional layer 520. Note that the functional layer 520 has a thicknessof 2 μm, a Young's modulus of 100 GPa, and a Poisson's ratio of 0.25,for example. The functional layer 720 has a thickness of 1 μm, a Young'smodulus of 100 GPa, and a Poisson's ratio of 0.25.

The bonding layer 709 includes a region between the functional layer 520and the functional layer 720, and the bonding layer 709 has a thicknessof T (μm). Note that the bonding layer 709 has a Young's modulus of 3GPa and a Poisson's ratio of 0.3, for example.

The thickness T satisfies the relation with the curvature radius R asrepresented by a formula below. Note that the unit of the curvatureradius R is mm, and the unit of the thickness T is μm. The thickness Tis larger than or equal to 0.1 μm and smaller than or equal to 500 μm,preferably larger than or equal to 1 μm and smaller than or equal to 100μm, for example.R≥0.35T  [Formula]

For example, the input/output device 700TP1 including the bonding layer709 that has a thickness of 13 μm can be used in combination with thehousing that can be folded with a curvature radius of 5 mm or more.

As another example, the input/output device 700TP1 including the bondinglayer 709 that has a thickness of 10 μm can be used in combination withthe housing that can be folded with a curvature radius of 3 mm or more.

As another example, the input/output device 700TP1 including the bondinglayer 709 that has a thickness of 8 μm can be used in combination withthe housing that can be folded with a curvature radius of 3 mm or more.

As another example, the input/output device 700TP1 including the bondinglayer 709 that has a thickness of 6 μm can be used in combination withthe housing that can be folded with a curvature radius of 2 mm or more.

Note that the base 510B that has a thickness of 23 μm, a Young's modulusof 7 GPa, and a Poisson's ratio of 0.3 and the bonding layer 510C thathas a thickness of 10 μm, a Young's modulus of 3 GPa, and a Poisson'sratio of 0.3 can be used in the base 510L.

The base 710B that has a thickness of 23 μm, a Young's modulus of 7 GPa,and a Poisson's ratio of 0.3 and the bonding layer 710C that has athickness of 10 μm, a Young's modulus of 3 GPa, and a Poisson's ratio of0.3 can be used in the base 710L.

Note that this embodiment can be combined with any of the otherembodiments in this specification as appropriate.

Embodiment 2

In this embodiment, a structure of an input/output device of oneembodiment of the present invention will be described with reference toFIGS. 7A, 7B-1, and 7B-2, FIGS. 8A and 8B, FIGS. 9A to 9C, FIG. 10, FIG.11, FIG. 12, and FIGS. 13A to 13C.

FIGS. 7A, 7B-1, and 7B-2 illustrate a structure of an input/outputdevice of one embodiment of the present invention. FIG. 7A is a top viewof the input/output device of one embodiment of the present invention.FIG. 7B-1 is a schematic view illustrating a part of an input portion ofthe input/output device of one embodiment of the present invention. FIG.7B-2 is a schematic view illustrating a part of FIG. 7B-1.

FIGS. 8A and 8B illustrate a pixel structure of the input/output deviceof one embodiment of the present invention. FIG. 8A is a top view ofpixels of the input/output device of one embodiment of the presentinvention, and FIG. 8B illustrates a part of FIG. 8A.

FIGS. 9A to 9C and FIG. 10 are cross-sectional views illustrating astructure of the input/output device of one embodiment of the presentinvention. FIG. 9A is a cross-sectional view taken along the cuttingplane lines X1-X2 and X3-X4 in FIG. 7A and the cutting plane line X5-X6in FIG. 7B-2. FIG. 9B illustrates a part of FIG. 9A. FIG. 9C is aschematic view illustrating a part of FIG. 9A.

FIG. 10 is a cross-sectional view taken along the cutting plane lineX7-X8 in FIG. 7B-2 and the cutting plane lines X9-X10 and X11-X12 inFIG. 7A.

FIG. 11 is a circuit diagram illustrating a structure of pixel circuitsof the input/output device of one embodiment of the present invention.

FIG. 12 is a block diagram illustrating a structure of the display panelincluded in the input/output device of one embodiment of the presentinvention.

FIGS. 13A to 13C are schematic views each illustrating shapes ofreflective films that can be used in pixels of the input/output deviceof one embodiment of the present invention.

Structure Example 1 of Input/Output Device

An input/output device 700TP2 described in this embodiment includes adisplay panel and an input portion (see FIGS. 7A, 7B-1, and 7B-2 orFIGS. 9A to 9C).

Structure Example of Display Panel

The display panel of the input/output device described in thisembodiment includes the pixel 702(i,j), the insulating film 501C, thethird conductive film 511B, and the electrode 519B (see FIG. 9A).

The insulating film 501C includes a region overlapping with the pixel702(i,j). The insulating film 501C includes the opening portion 591B.

The third conductive film 511B is electrically connected to the pixel702(i,j). The third conductive film 511B includes a region overlappingwith the insulating film 501C. The third conductive film 511B includes aregion overlapping with the opening portion 591B.

The electrode 519B is electrically connected to the third conductivefilm 511B. The electrode 519B includes the first region 519B1 and thesecond region 519B2 (see FIG. 9C).

The first region 519B1 is in contact with the third conductive film511B. The second region 519B2 functions as a contact point. The openingportion 591B includes a region occupied by the third conductive film511B or the electrode 519B. The third conductive film 511B or theelectrode 519B that occupies a part of the opening portion 591B in theinsulating film 501C can be referred to as through electrode. In otherwords, the third conductive film 511B or the electrode 519B that fills apart of the opening portion 591B can be referred to as throughelectrode. The second region 519B2 has a shape projecting from a surfaceof the insulating film 501C, for example.

The insulating film 501C has a thickness larger than or equal to 0.2 μmand smaller than or equal to 1.5 μm and has a water vapor transmissionrate lower than or equal to 10⁻³ g/(m²·day), preferably lower than orequal to 10⁻⁴ g/(m²·day), more preferably lower than or equal to 10⁻⁵g/(m²·day).

The display panel of the input/output device described in thisembodiment includes a first base 570 and a second base 770 (see FIG.9A).

The first base 570 includes a region overlapping with the insulatingfilm 501C. The second base 770 includes a region that is provided sothat the insulating film 501C is positioned between the region of thesecond base 770 and the first base 570.

The display panel of the input/output device described in thisembodiment includes the pixel, the third conductive film electricallyconnected to the pixel, the insulating film including the openingportion overlapping with the third conductive film, and the electrodeincluding the first region in contact with the third conductive film andthe second region functioning as a contact point. Thus, a signal,electric power, or the like can be supplied to the pixel protected bythe insulating film. As a result, a novel display panel that is highlyconvenient or reliable can be provided.

The display panel of the input/output device described in thisembodiment includes the one group of pixels 702(i,1) to 702(i,n), theother group of pixels 702(1,j) to 702(m,j), the signal line S2(j), andthe scan line G2(i) (see FIG. 12). In addition, a signal line S1(j) anda scan line G1(i) are included. Note that i is an integer greater thanor equal to 1 and less than or equal to m, j is an integer greater thanor equal to 1 and less than or equal to n, and one of m and n is aninteger greater than 1.

The one group of pixels 702(i,1) to 702(i,n) include the pixel 702(i,j).The one group of pixels 702(i,1) to 102(i,n) are arranged in a rowdirection (indicated by an arrow R1 in the drawing).

The other group of pixels 702(1,j) to 702(m,j) include the pixel702(i,j). The other group of pixels 702(1,j) to 702(m,j) are arranged ina column direction (indicated by an arrow C1 in the drawing) thatintersects with the row direction.

The scan line G2(i) is electrically connected to the one group of pixels702(i,1) to 702(i,n). The scan line G1(i) is electrically connected tothe one group of pixels 702(i,1) to 702(i,n).

The other group of pixels 702(1,j) to 702(m,j) are electricallyconnected to the signal line S2(j). The other group of pixels 702(1,j)to 702(m,j) are electrically connected to the signal line S1(j).

The scan line G2(i) or the signal line S2(j) is electrically connectedto the third conductive film 511B. The scan line G1(i) or the signalline S1(j) is electrically connected to the third conductive film 511B.

The display panel of the input/output device described in thisembodiment includes the driver circuit SD (see FIG. 12). The drivercircuit SD has a function of supplying an image signal. The drivercircuit SD is electrically connected to the second region 519B2. Thesignal line S2(j) is electrically connected to the third conductive film511B. The signal line S1(j) is electrically connected to the thirdconductive film 511B.

The pixel 702(i,j) of the display panel of the input/output devicedescribed in this embodiment includes the pixel circuit 530(i,j), afirst conductive film, a first display element 750(i,j), and a seconddisplay element 550(i,j).

The pixel circuit 530(i,j) is electrically connected to the signal lineS2(j) (see FIG. 9A or FIG. 11). The pixel circuit 530(i,j) is alsoelectrically connected to the signal line S1(j).

The first conductive film includes a region overlapping with a secondconductive film. For example, the first conductive film can be used fora first electrode 751(i,j) of the first display element 750(i,j). Theconductive film 512B functioning as a source electrode or a drainelectrode of a transistor used as a switch SW1 of the pixel circuit530(i,j) can be used for the second conductive film (see FIG. 9A andFIG. 10).

The first conductive film includes a region that is provided so that theinsulating film 501C is positioned between the region and the secondconductive film. The first conductive film includes a region that isprovided so that the opening portion 591A is positioned between theregion and the second conductive film. The first conductive film iselectrically connected to the second conductive film in the openingportion 591A. The first electrode 751(i,j) is electrically connected tothe conductive film 512B, for example. Note that the first conductivefilm electrically connected to the second conductive film in the openingportion 591A that is formed in the insulating film 501C can be referredto as through electrode. In other words, the first conductive film thatfills a part of the opening portion 591A can be referred to as throughelectrode.

The first display element 750(i,j) is electrically connected to thefirst conductive film, and the second display element 550(i,j) iselectrically connected to the pixel circuit 530(i,j).

The first display element 750(i,j) includes a reflective film and has afunction of controlling the intensity of light reflected by thereflective film. Note that the first conductive film, the firstelectrode 751(i,j), or the like can be used as the reflective film ofthe first display element 750(i,j).

The second display element 550(i,j) has a function of emitting lighttoward the insulating film 501C (see FIG. 9A).

The reflective film has shape including a region that does not blocklight emitted from the second display element 550(i,j). For example, thereflective film includes one opening portion 751H or a plurality ofopening portions 751H (see FIGS. 13A to 13C).

The second display element 550(i,j) has a function of emitting lighttoward the opening portion 751H. Note that light emitted from the seconddisplay element 550(i,j) passes through the opening portion 751H.

Thus, the first display element and the second display element thatdisplays an image using a method different from that of the firstdisplay element can be driven using a pixel circuit that can be formedin one process. Specifically, a reflective display element is used asthe first display element, whereby the power consumption can be reduced.In addition, an image with high contrast can be favorably displayed inan environment with bright external light. In addition, the seconddisplay element that emits light is used, whereby an image can befavorably displayed in a dark environment. Furthermore, using theinsulating film, impurity diffusion between the first display elementand the second display element or between the first display element andthe pixel circuit can be suppressed. Moreover, part of light emittedfrom the second display element to which a voltage controlled on thebasis of the control data is supplied is not blocked by the reflectivefilm included in the first display element. Consequently, a noveldisplay panel that is highly convenient or reliable can be provided.

The opening portion 751H of the pixel 702(i,j+1) which is adjacent tothe pixel 702(i,j), is not provided on a line that extends in the rowdirection (the direction indicated by an arrow R1 in the drawing)through the opening portion 751H of the pixel 702(i,j) (see FIG. 13A).Alternatively, for example, the opening portion 751H of the pixel702(i+1,j), which is adjacent to the pixel 702(i,j), is not provided ona line that extends in the column direction (the direction indicated byan arrow C1 in the drawing) through the opening portion 751H of thepixel 702(i,j) (see FIG. 13B).

For example, the opening portion 751H of the pixel 702(i,j+2) isprovided on a line that extends in the row direction through the openingportion 751H of the pixel 702(i,j) (see FIG. 13A). In addition, theopening portion 751H of the pixel 702(i,j+1) is provided on a line thatis perpendicular to the above-mentioned line between the opening portion751H of the pixel 702(i,j) and the opening portion 751H of the pixel702(i,j+2).

Alternatively, for example, the opening portion 751H of the pixel702(i+2,j) is provided on a line that extends in the column directionthrough the opening portion 751H of the pixel 702(i,j) (see FIG. 13B).In addition, for example, the opening portion 751H of the pixel702(i+1,j) is provided on a line that is perpendicular to theabove-mentioned line between the opening portion 751H of the pixel702(i,j) and the opening portion 751H of the pixel 702(i+2,j).

Thus, for example, a second display element that displays a colordifferent from that displayed by the second display element provided inthe pixel 702(i,j) can be provided easily in the pixel 702(i+1,j)adjacent to the pixel 702(i,j). As a result, a novel display panel thatis highly convenient or reliable can be provided.

For example, the reflective film can be formed using a material having ashape in which an end portion is cut off so as to form a region 751Ethat does not block light emitted from the second display element550(i,j) (see FIG. 13C). Specifically, the first electrode 751(i,j)whose end portion is cut off so as to be shorter in the column direction(the direction indicated by an arrow C1 in the drawing) can be used asthe reflective film.

The second display element 550(i,j) of the display panel of theinput/output device described in this embodiment is provided so that thedisplay using the second display element 550(i,j) can be seen from partof a region from which the display using the first display element750(i,j) can be seen. For example, dashed arrows shown in FIG. 10 denotethe directions in which external light is incident on and reflected bythe first display element 750(i,j) that performs display by controllingthe intensity of external light reflection. In addition, a solid arrowshown in FIG. 9A denotes the direction in which the second displayelement 550(i,j) emits light to the part of the region from which thedisplay using the first display element 750(i,j) can be seen.

Thus, the display using the second display element can be seen from partof the region from which the display using the first display element canbe seen. Alternatively, a user can view the display without changing theattitude or the like of the display panel. Thus, a novel display panelthat is highly convenient or reliable can be provided.

The pixel circuit 530(i,j) is electrically connected to the signal lineS1(j). Note that the conductive film 512A is electrically connected tothe signal line S1(j) (see FIG. 10 and FIG. 11). Furthermore, forexample, the transistor in which the second conductive film is used asthe conductive film 512B serving as a source electrode or a drainelectrode can be used as the switch SW1 of the pixel circuit 530(i,j).

The display panel described in this embodiment includes the scan lineG2(i), the wiring CSCOM, the conductive film ANO, and the signal lineS2(j) (see FIG. 11).

The second display element 550(i,j) of the display panel described inthis embodiment includes the third electrode 551(i,j), the fourthelectrode 552, and the layer 553(j) containing a light-emitting material(see FIG. 9A).

The fourth electrode 552 includes a region overlapping with the thirdelectrode 551(i,j).

The layer 553(j) containing a light-emitting material includes a regionpositioned between the third electrode 551(i,j) and the fourth electrode552.

The third electrode 551(i,j) is electrically connected to the pixelcircuit 530(i,j) at the connection portion 522.

The first display element 750(i,j) of the display panel described inthis embodiment includes a layer 753 containing a liquid crystalmaterial, the first electrode 751(i,j), and a second electrode 752. Thesecond electrode 752 is positioned such that an electric field whichcontrols the alignment of the liquid crystal material is generatedbetween the second electrode 752 and the first electrode 751(i,j) (seeFIG. 9A and FIG. 10).

The display panel described in this embodiment includes an alignmentfilm AF1 and an alignment film AF2. The alignment film AF2 is providedsuch that the layer 753 containing a liquid crystal material isinterposed between the alignment film AF1 and the alignment film AF2.

The display panel described in this embodiment includes thelight-blocking film BM, the insulating film 771, the functional film770P, and a functional film 770D. In addition, the coloring film CF1 anda coloring film CF2 are included.

The light-blocking film BM has an opening portion in a regionoverlapping with the first display element 750(i,j). The coloring filmCF2 includes a region provided between the insulating film 501C and thesecond display element 550(i,j) and includes a region overlapping withthe opening portion 751H (see FIG. 9A).

The insulating film 771 includes a region positioned between thecoloring film CF1 and the layer 753 containing a liquid crystal materialor between the light-blocking film BM and the layer 753 containing aliquid crystal material. Thus, unevenness due to the thickness of thecoloring film CF1 can be avoided. Alternatively, impurities can beprevented from being diffused from the light blocking film BM, thecoloring film CF1, or the like to the layer 753 containing a liquidcrystal material.

The functional film 770P includes a region overlapping with the firstdisplay element 750(i,j).

The functional film 770D includes a region overlapping with the firstdisplay element 750(i,j). The functional film 770D is provided so thatthe base 770 lies between the functional film 770D and the first displayelement 750(i,j). This can diffuse light reflected by the first displayelement 750(i,j), for example.

The display panel described in this embodiment includes the base 570,the base 770, and the functional layer 520.

The base 770 includes a region overlapping with the base 570.

The functional layer 520 includes a region positioned between the base570 and the base 770. The functional layer 520 includes the pixelcircuit 530(i,j), the second display element 550(i,j), the insulatingfilm 521, and the insulating film 528. The functional layer 520 includesthe insulating film 518 and the insulating film 516 (see FIGS. 9A and9B).

The insulating film 521 includes a region positioned between the pixelcircuit 530(i,j) and the second display element 550(i,j).

The insulating film 528 includes a region positioned between theinsulating film 521 and the base 570 and has an opening portion in aregion overlapping with the second display element 550(i,j).

The insulating film 528 formed along the periphery of the thirdelectrode 551(i,j) can prevent a short circuit between the thirdelectrode 551(i,j) and the fourth electrode.

The insulating film 518 includes a region positioned between theinsulating film 521 and the pixel circuit 530(i,j). The insulating film516 includes a region positioned between the insulating film 518 and thepixel circuit 530(i,j).

The display panel described in this embodiment also includes a bondinglayer 505, a sealing material 705, and a structure body KB1.

The bonding layer 505 includes a region positioned between thefunctional layer 520 and the base 570, and has a function of bonding thefunctional layer 520 and the base 570 together.

The sealing material 705 includes a region positioned between thefunctional layer 520 and the base 770, and has a function of bonding thefunctional layer 520 and the base 770 together.

The structure body KB1 has a function of providing a certain spacebetween the functional layer 520 and the base 770.

The display panel described in this embodiment includes the electrode519B and the electrode 519C.

The electrode 519B is in contact with the conductive film 511B. Theelectrode 519B is electrically connected to the signal line S1(j), forexample.

The electrode 519C is in contact with the conductive film 511C. Theconductive film 511C is electrically connected to the wiring VCOM1, forexample.

The conductive material CP is positioned between the electrode 519C andthe second electrode 752, and has a function of electrically connectingthe electrode 519C to the second electrode 752. For example, aconductive particle can be used as the conductive material CP.

Moreover, the display panel described in this embodiment includes thedriver circuit GD and the driver circuit SD (see FIGS. 7A, 7B-1, and7B-2 or FIG. 12).

The driver circuit GD is electrically connected to the scan line G1(i).The driver circuit GD includes the transistor MD, for example (see FIG.9A). Specifically, a transistor including a semiconductor film that canbe formed in the same process as the semiconductor film of thetransistor included in the pixel circuit 530(i,j) can be used as thetransistor MD.

The driver circuit SD is electrically connected to the signal lineS1(j). The driver circuit SD is electrically connected to the electrode519B, for example.

Structure Example of Input Portion

Note that the input portion described in this embodiment is differentfrom the input portion of the input/output device, which is describedwith reference to FIGS. 1A, 1B-1, 1B-2, and 1C, FIGS. 2A and 2B, FIGS.3A to 3C, FIG. 4, FIG. 5 and FIGS. 6A and 6B, in that: the electrodeC(g) is provided with an opening portion in a region overlapping with apixel; the electrode M(h) is provided with an opening portion in aregion overlapping with the pixel; a conductive film 511D electricallyconnected to the control line CL(g) or the sensing signal line M(h) isincluded; and an electrode 519D electrically connected to the conductivefilm 511D is included. Different structures will be described in detailbelow, and the above description is referred to for the other similarstructures.

In the input/output device described in this embodiment, the controlline CL(g) is electrically connected to the electrode C(g) provided withthe opening portion, and the sensing signal line ML(h) is electricallyconnected to the electrode ML(h) provided with the opening portion. Theopening portions include the regions overlapping with the pixel. Forexample, an opening portion of a conductive film included in the controlline CL(g) includes a region overlapping with the pixel 702(i,j) (seeFIGS. 7B-1 and 7B-2 and FIG. 9A).

In the input/output device described in this embodiment, the gap betweenthe control line CL(g) and the second electrode 752 or between thesensing signal line ML(h) and the second electrode 752 is greater thanor equal to 0.2 μm and less than or equal to 16 μm, preferably greaterthan or equal to 1 μm and less than or equal to 8 μm, and furtherpreferably greater than or equal to 2.5 μm and less than or equal to 4μm.

The input/output device of one embodiment of the present inventionincludes the first electrode provided with the opening portion in theregion overlapping with the pixel and the second electrode provided withthe opening portion in the region overlapping with the pixel.Accordingly, an object that approaches a region overlapping with thedisplay panel can be sensed without disturbing display of the displaypanel. Furthermore, the thickness of the input/output device can bereduced. As a result, a novel input/output device that is highlyconvenient or reliable can be provided.

In the input portion of the input/output device described in thisembodiment, the functional layer 720 is provided in the regionsurrounded by the base 770, the insulating film 501C, and the sealingmaterial 705. Thus, the input/output device can be formed without usingthe base 710 and the bonding layer 709.

The input/output device described in this embodiment includes theconductive film 511D (see FIG. 10).

Note that the conductive material CP or the like can be provided betweenthe control line CL(g) and the conductive film 511D to electricallyconnect the control line CL(g) to the conductive film 511D.Alternatively, the conductive material CP or the like can be providedbetween the sensing signal line ML(h) and the conductive film 511D toelectrically connect the sensing signal line ML(h) to the conductivefilm 511D.

The input/output device described in this embodiment includes theelectrode 519D electrically connected to the conductive film 511D. Theelectrode 519D is electrically connected to the conductive film 511D(see FIG. 10). The electrode 519D includes a first region and a secondregion. The first region is in contact with the conductive film 511D,and the second region functions as a contact point. An opening portion591D includes a region occupied by the conductive film 511D or theelectrode 519D. The second region has a shape projecting from thesurface of the insulating film 501C, for example.

Note that the electrode 519D can be electrically connected to theflexible printed circuit FPC2 using the conductive material ACF2, forexample. Accordingly, a control signal can be supplied to the controlline CL(g) using the electrode 519D, or a sensing signal can be suppliedfrom the sensing signal line ML(h) using the electrode 519D, forexample.

Structure Example

The input/output device of one embodiment of the present inventionincludes the display panel or the input portion.

The display panel of one embodiment of the present invention includesthe base 570, the base 770, the functional layer 520, the structure bodyKB1, the sealing material 705, or the bonding layer 505.

The display panel of one embodiment of the present invention includesthe signal line S1(j), the signal line S2(j), the scan line G1(i), thescan line G2(i), the wiring CSCOM, or the conductive film ANO.

The display panel of one embodiment of the present invention includesthe first conductive film or the second conductive film.

The display panel of one embodiment of the present invention includesthe electrode 519B, the electrode 519C, the conductive film 511B, or theconductive film 511C.

The display panel of one embodiment of the present invention includesthe pixel circuit 530(i,j) or the switch SW1.

The display panel of one embodiment of the present invention includesthe first display element 750(i,j), the first electrode 751(i,j), thereflective film, the opening portion, the layer 753 containing a liquidcrystal material, or the second electrode 752.

The display panel of one embodiment of the present invention includesthe alignment film AF1, the alignment film AF2, the coloring film CF1,the coloring film CF2, the light-blocking film BM, the insulating film771, the functional film 770P, or the functional film 770D.

In addition, the display panel of one embodiment of the presentinvention includes the second display element 550(i,j), the thirdelectrode 551(i,j), the fourth electrode 552, or the layer 553(j)containing a light-emitting material.

The display panel of one embodiment of the present invention includesthe insulating film 501C.

The display panel of one embodiment of the present invention includesthe driver circuit GD or the driver circuit SD.

The input portion includes the base 710, the functional layer 720, thebonding layer 709, and the terminal 719 (see FIG. 4 and FIG. 5).

The functional layer 720 includes a region positioned between the base770 and the base 710. The functional layer 720 includes the sensingelement 775(g,h) and the insulating film 706.

The bonding layer 709 includes a region positioned between thefunctional layer 720 and the base 770, and has a function of bonding thefunctional layer 720 to the base 770 together.

The terminal 719 is electrically connected to the sensing element775(g,h).

Base 570

The base 570 or the like can be formed using a material having heatresistance high enough to withstand heat treatment in the manufacturingprocess. For example, the material that can be used for the base 510L orthe like described in Embodiment 1 can be used.

Base 770

For example, a light-transmitting material can be used for the base 770.Specifically, a material selected from the materials that can be usedfor the base 570 can be used for the base 770.

Sealing Material 705

For the sealing material 705 or the like, an inorganic material, anorganic material, a composite material of an inorganic material and anorganic material, or the like can be used. For example, the materialthat can be used for the bonding layer 709 or the like described inEmbodiment 1 can be used.

Insulating Film 521

For example, an insulating inorganic material, an insulating organicmaterial, or an insulating composite material containing an inorganicmaterial and an organic material can be used for the insulating film 521or the like. For example, the material that can be used for theinsulating film 521 or the like described in Embodiment 1 can be used.

Insulating Film 528

For example, any of the materials that can be used for the insulatingfilm 521 can be used for the insulating film 528 or the like.Specifically, a 1-μm-thick polyimide-containing film can be used as theinsulating film 528.

Insulating Film 501C

For example, any of the materials that can be used for the insulatingfilm 521 can be used for the insulating film 501C. Specifically, amaterial containing silicon and oxygen can be used for the insulatingfilm 501C. Thus, diffusion of impurities into the pixel circuit, thesecond display element 550(i,j), or the like can be suppressed.

For example, a 200-nm-thick film containing silicon, oxygen, andnitrogen can be used as the insulating film 501C.

Wiring, Electrode, Terminal, and Conductive Film

A conductive material can be used for the wiring or the like.Specifically, the conductive material can be used for the signal lineS1(j), the signal line S2(j), the scan line G1(i), the scan line G2(i),the wiring CSCOM, the conductive film ANO, the electrode 519B, theelectrode 519C, the terminal 719, the conductive film 511B, theconductive film 511C, the conductive film 511D, or the like. Forexample, the material that can be used for the wiring or the likedescribed in Embodiment 1 can be used.

Pixel Circuit 530(i,j)

The pixel circuit 530(i,j) is electrically connected to the signal lineS1(j), the signal line S2(j), the scan line G1(i), the scan line G2(i),the wiring CSCOM, and the conductive film ANO (see FIG. 11).

The pixel circuit 530(i,j) includes the switch SW1 and a capacitor C11.

The pixel circuit 530(i,j) includes the switch SW2, the transistor M,and the capacitor C12.

For example, a transistor including a gate electrode electricallyconnected to the scan line G1(i) and a first electrode electricallyconnected to the signal line S1(j) can be used as the switch SW1.

The capacitor C11 includes a first electrode electrically connected to asecond electrode of the transistor used as the switch SW1 and a secondelectrode electrically connected to the wiring CSCOM.

For example, a transistor including a gate electrode electricallyconnected to the scan line G2(i) and a first electrode electricallyconnected to the signal line S2(j) can be used as the switch SW2.

The transistor M includes a gate electrode electrically connected to thesecond electrode of the transistor used as the switch SW2 and includes afirst electrode electrically connected to the conductive film ANO.

Note that a transistor including a conductive film including a regionpositioned so that a semiconductor film is positioned between the regionand a gate electrode can be used as the transistor M. For example, asthe conductive film, a conductive film electrically connected to awiring that can supply the same potential as that of the gate electrodeof the transistor M can be used.

The capacitor C12 includes a first electrode electrically connected to asecond electrode of the transistor used as the switch SW2 and a secondelectrode electrically connected to the first electrode of thetransistor M.

The first electrode and the second electrode of the first displayelement 750(i,j) are electrically connected to the second electrode ofthe transistor used as the switch SW1 and the wiring VCOM1,respectively. This enables the first display element 750 to be driven.

Furthermore, the third electrode and the fourth electrode of the seconddisplay element 550(i,j) are electrically connected to the secondelectrode of the transistor M and the fourth conductive film VCOM2,respectively. This enables the second display element 550(i,j) to bedriven.

Switch SW1, Switch SW2, Transistor M, and Transistor MD

For example, a bottom-gate or top-gate transistor or the like can beused as the switch SW1, the switch SW2, the transistor M, the transistorMD, or the like.

For example, a transistor including a semiconductor containing anelement belonging to Group 14 in a semiconductor film can be used.Specifically, a semiconductor containing silicon can be used for asemiconductor film. For example, a transistor including single crystalsilicon, polysilicon, microcrystalline silicon, amorphous silicon, orthe like in a semiconductor film can be used.

For example, a transistor including an oxide semiconductor in asemiconductor film can be used. Specifically, an oxide semiconductorcontaining indium or an oxide semiconductor containing indium, gallium,and zinc can be used for a semiconductor film.

For example, a transistor whose leakage current in an off state issmaller than that of a transistor including amorphous silicon in asemiconductor film can be used as the switch SW1, the switch SW2, thetransistor M, the transistor MD, or the like. Specifically, a transistorincluding an oxide semiconductor in the semiconductor film 508 can beused as the switch SW1, the switch SW2, the transistor M, the transistorMD, or the like.

Thus, a pixel circuit can hold an image signal for a longer time than apixel circuit including a transistor that uses amorphous silicon for asemiconductor film. Specifically, a selection signal can be supplied ata frequency of lower than 30 Hz, preferably lower than 1 Hz, furtherpreferably less than once per minute while flickering is suppressed.Consequently, eyestrain on a user of the data processing device can bereduced, and power consumption for driving can be reduced.

A transistor that can be used for the switch SW1, the transistor M, andthe transistor MD include the conductive film 504 having a regionoverlapping with the insulating film 501C and the semiconductor film 508having a region located between the insulating film 501C and theconductive film 504. Note that the conductive film 504 functions as agate electrode (see FIG. 9B).

The semiconductor film 508 includes a first region 508A, a second region508B, and a third region 508C. The first region 508A and the secondregion 508B do not overlap with the conductive film 504. The thirdregion 508C is positioned between the first region 508A and the secondregion 508B and overlaps with the conductive film 504.

A transistor that can be used for the switch SW1, the transistor M, andthe transistor MD include the insulating film 506 between the thirdregion 508C and the conductive film 504. Note that the insulating film506 functions as a gate insulating film.

The first region 508A and the second region 508B have a lowerresistivity than the third region 508C, and function as a source regionand a drain region.

Note that, for example, the method for controlling the resistivity of anoxide semiconductor film, which is described in detail in Embodiment 1,can be used to form the first region 508A and the second region 508B inthe semiconductor film 508. Specifically, plasma treatment using a gascontaining a rare gas can be used.

For example, the conductive film 504 can be used as a mask. The use ofthe conductive film 504 as a mask allows the shape of part of the thirdregion 508C to be self-aligned with the shape of an end of theconductive film 504.

A transistor that can be used for the switch SW1, the transistor M, andthe transistor MD include the conductive film 512A in contact with thefirst region 508A and the conductive film 512B in contact with thesecond region 508B. The conductive film 512A and the conductive film512B function as a source electrode and a drain electrode.

A transistor that can be used for the switch SW1, the transistor M, andthe transistor MD can be formed in the same step.

Light-Blocking Film BM

The light-blocking film BM can be formed of a material that preventslight transmission and can thus be used as a black matrix, for example.

Insulating Film 771

The insulating film 771 can be formed of polyimide, an epoxy resin, anacrylic resin, or the like, for example.

Functional Films 770P and 770D

For example, an anti-reflection film, a polarizing film, a retardationfilm, a light diffusion film, a condensing film, or the like can be usedas the functional film 770P or the functional film 770D.

Specifically, a film containing a dichromatic pigment can be used as thefunctional film 770P or the functional film 770D. Furthermore, amaterial having a pillar-shaped structure with an axis in a directionthat intersects with a surface of the base can be used as the functionalfilm 770P or the functional film 770D. This makes it easy to transmitlight in a direction along the axis and to scatter light in the otherdirections.

Alternatively, an antistatic film preventing the attachment of a foreignsubstance, a water repellent film suppressing the attachment of stain, ahard coat film suppressing a scratch in use, or the like can be used asthe functional film 770P.

Specifically, a circularly polarizing film can be used as the functionalfilm 770P. Furthermore, a light diffusion film can be used as thefunctional film 770D.

Second Display Element 550(i,j)

For example, the second display element 550(i,j) can be a light-emittingelement. Specifically, a display element that can be used as the displayelement 550(i,j) or the like described in Embodiment 1 can be used.

Driver Circuit GD

Any of a variety of sequential circuits, such as a shift register, canbe used as the driver circuit GD. For example, the transistor MD, acapacitor, and the like can be used in the driver circuit GD.Specifically, a transistor that includes a semiconductor film and can beformed in the same process as the transistor M can be used. For example,a transistor having the same structure as the transistor M can be usedas the transistor MD. Alternatively, a transistor having a structuredifferent from that of the transistor M can be used as the transistorMD.

Driver Circuit SD

The driver circuit SD has a function of supplying an image signal. Forexample, any of a variety of sequential circuits, such as a shiftregister, can be used as the driver circuit SD. Specifically, anintegrated circuit formed over a silicon substrate can be used as thedriver circuit SD.

For example, the driver circuit SD can be mounted on the electrode 519Bby a chip on glass (COG) method. Specifically, an anisotropic conductivefilm can be used to mount an integrated circuit on the electrode 519B.Alternatively, a chip on film (COF) may be used to mount an integratedcircuit on the electrode 519B.

Note that this embodiment can be combined with any of the otherembodiments in this specification as appropriate.

Embodiment 3

In this embodiment, a method for manufacturing an input/output device ofone embodiment of the present invention will be described with referenceto FIGS. 14 to 22.

FIG. 14 is a flow chart showing the method for manufacturing theinput/output device of one embodiment of the present invention.

FIGS. 15A to 22 illustrate structures of the display panel of oneembodiment of the present invention in the manufacturing process. FIGS.15A to 15C, FIGS. 17A to 17D, FIGS. 19A and 19B, and FIG. 21 arecross-sectional views taken along the cutting plane lines X1-X2, X3-X4,and X5-X6 in FIG. 1A. FIGS. 16A to 16C, FIGS. 18A to 18C, FIGS. 20A and20B, and FIG. 22 are cross-sectional views taken along the cutting planelines X7-X8, X9-X10, and X11-X12 in FIG. 1A. Note that a part of FIG.17C is shown in FIG. 17D.

Method 1 for Manufacturing Input/Output Device

A method for manufacturing the input/output device described in thisembodiment includes the following 11 steps (see FIG. 14).

First Step

In a first step, a separation film 510W is formed over a processsubstrate 510 (see U1 in FIG. 14).

For the separation film 510W, an inorganic material, an organic resin,or the like can be used, for example.

For example, a single-layer material or a layered material including aplurality of films can be used for the separation film 510W.

Specifically, an inorganic material such as a metal containing anelement selected from tungsten, molybdenum, titanium, tantalum, niobium,nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium,iridium, and silicon, an alloy including any of the elements, or acompound including any of the elements can be used for the separationfilm 510W.

A film containing tungsten or a material obtained by stacking a filmcontaining tungsten and a film containing an oxide of tungsten can beused for the separation film 510W.

A film containing an oxide of tungsten can be formed using a method inwhich a film is stacked on a film containing tungsten. Specifically, afilm containing silicon and oxygen is stacked on the film containingtungsten. For example, the film containing silicon and oxygen is stackedon the film containing tungsten with the use of a gas containing nitrousoxide (N₂O).

A surface of a film containing tungsten can be subjected to any of avariety of treatments to form a film containing an oxide of tungsten.For example, thermal oxidation treatment, oxygen plasma treatment,nitrous oxide (N₂O) plasma treatment, treatment using a solution withhigh oxidizing power (e.g., ozone water), or the like is performed.

Specifically, a 30-nm-thick film containing tungsten and having asurface subjected to plasma treatment in an atmosphere containingnitrous oxide (N₂O) can be used for the separation film 510W.Alternatively, a 30-nm-thick film containing tungsten and having asurface subjected to plasma treatment in an atmosphere containing silaneand nitrous oxide (N₂O) can be used for the separation film 510W.

An organic material such as polyimide, polyester, polyolefin, polyamide,polycarbonate, or an acrylic resin can be used for the separation film510W. Specifically, a film containing polyimide can be used for theseparation film 510W. A film containing polyimide that can withstand atemperature higher than or equal to 200° C., preferably higher than orequal to 250° C., further preferably higher than or equal to 300° C.,and still further preferably higher than or equal to 350° C. can be usedfor the separation film 510W.

The process substrate 510 can be formed using a material having heatresistance high enough to withstand heat treatment in the manufacturingprocess.

For example, a large-sized glass substrate having any of the followingsizes can be used as the process substrate 510: the 6th generation (1500mm×1850 mm), the 7th generation (1870 mm×2200 mm), the 8th generation(2200 mm×2400 mm), the 9th generation (2400 mm×2800 mm), and the 10thgeneration (2950 mm×3400 mm). Thus, a large-sized display device can bemanufactured.

For example, an inorganic material such as glass, ceramic, or a metalcan be used for the process substrate 510.

Specifically, non-alkali glass, soda-lime glass, potash glass, crystalglass, quartz, sapphire, or the like can be used for the processsubstrate 510. Specifically, an inorganic oxide film, an inorganicnitride film, an inorganic oxynitride film, or the like can be used forthe process substrate 510. For example, a silicon oxide film, a siliconnitride film, a silicon oxynitride film, an aluminum oxide film, or thelike can be used for the process substrate 510. For example, stainlesssteel or aluminum can be used for the process substrate 510.

Second Step

In a second step, the insulating film 501A including a regionoverlapping with the separation film 510W is formed (see U2 in FIG. 14,FIG. 15A, and FIG. 16A).

Note that a material that can be separated from the process substrate510 in a later step is used for the insulating film 501A. For example, amaterial that can be separated from the process substrate 510 with theseparation film 510W left on the process substrate 510 side can be usedfor the insulating film 501A. Alternatively, a material that can beseparated from the process substrate 510 along with the separation film510W can be used for the insulating film 501A.

The insulating film 501A can be formed by a chemical vapor depositionmethod using silane or the like as a source gas, for example.

Specifically, a material in which a film 501A1 and a film 501A2 arestacked in this order can be used for the insulating film 501A.

A film with a thickness larger than or equal to 200 nm and smaller thanor equal to 600 nm can be used for the film 501A1, for example. Amaterial containing silicon and oxygen or a material containing silicon,oxygen, and nitrogen can be used for the film 501A1.

A film with a thickness of approximately 200 nm can be used for the film501A2, for example. A material containing silicon and nitrogen can beused for the film 501A2.

The insulating film 501A has a function of supplying hydrogen whenheated in a later step. The film 501A2 has a function of preventinghydrogen passage. Hydrogen supplied by heating the insulating film 501Ain a later step is diffused toward an interface between the insulatingfilm 501A and the separation film 510W.

Third Step

In a third step, the insulating film 501A is heated (see U3 in FIG. 14).

By the heating, for example, the insulating film 501A supplies hydrogen,and hydrogen reaches the separation film 510W. Thus, a structure withwhich the insulating film 501A can be separated from the processsubstrate 510 in a later step is formed between the insulating film 501Aand the process substrate 510.

Fourth Step

In a fourth step, the insulating film 501C including a regionoverlapping with the insulating film is formed (see U4 in FIG. 14, FIG.15B, and FIG. 16B).

Fifth Step

In a fifth step, the opening portion 591B is formed in the insulatingfilm 501C, and an opening portion overlapping with the opening portion591B is formed in the insulating film 501A and the separation film 510W(see U5 in FIG. 14, FIG. 15C, and FIG. 16C).

The insulating film 501C, the insulating film 501A, and the separationfilm 510W are made to have a predetermined shape by a photolithographymethod and an etching method, for example. Note that in some cases, arecessed portion is formed in a region of the process substrate 510 thatoverlaps with the opening portion 591B.

Sixth Step

In a sixth step, the electrode 519B in contact with the processsubstrate 510 is formed in the opening portion 591B (see U6 in FIG. 14,FIG. 17A, FIG. 17B, FIG. 18A, and FIG. 18B). The electrode 519B thatoccupies a part of the opening portion 591B in the insulating film 501Ccan be referred to as through electrode. In other words, the electrode519B that fills a part of the opening portion 591B can be referred to asthrough electrode.

For example, an electroless plating method or a sputtering method can beused for forming the electrode 519B. The electrode 519B can have apredetermined shape by, for example, removing an unnecessary portionthereof. Specifically, a chemical mechanical polishing method or thelike can be used, or a photolithography method and an etching method canbe used.

Note that the electrode is formed using a material that can be separatedfrom the process substrate 510 in a later step. In the case where theprocess substrate 510 is formed using glass, for example, the electrodecan be formed using a material having poor adhesion to glass.Specifically, copper or the like can be used for the electrode.

Seventh Step

In a seventh step, the conductive film 511B in contact with theelectrode 519B and the pixel circuit 530(i,j) electrically connected tothe conductive film 511B are formed (see U7 in FIG. 14, FIG. 17C, andFIG. 18C). Note that the conductive film 511B includes a regionoverlapping with the insulating film 501C and the opening portion 591B.The conductive film 511B includes a region in contact with the electrode519B.

The conductive film 511B can be formed using, for example, a conductivefilm formed in the same step as the conductive film 512B functioning asa source electrode or a drain electrode of the transistor M.

Eighth Step

In an eighth step, the display element 550(i,j) to be electricallyconnected to the pixel circuit 530(i,j) is formed (see U8 in FIG. 14,FIG. 19A, and FIG. 20A).

Ninth Step

In a ninth step, the second base 710L is stacked to overlap with theinsulating film 501C (see U9 in FIG. 14).

For example, the holding layer 709 is formed by a printing method, acoating method, or the like, and the second base 710L is bonded to thefunctional layer 520 using the bonding layer 709.

Tenth Step

In a tenth step, separation from the process substrate 510 is performed(see U10 in FIG. 14, FIG. 19B, and FIG. 20B).

For example, a separation starting point at which a part of theinsulating film 501A is separated from the process substrate 510 isformed. Then, a region where the insulating film 501A is separated fromthe process substrate 510 is gradually extended from the separationstarting point; as a result, the insulating film 501A is separated fromthe process substrate 510.

The separation starting point can be formed by, for example, a methodusing a laser (specifically, a laser ablation method) or a method usinga cutter with a sharp tip. Furthermore, for example, the insulating film501A is separated from the process substrate 510 while a liquid isinjected between the process substrate 510 and the insulating film 501A.Specifically, the insulating film 501A is separated while a liquidcontaining water is injected between the separation film 510W and theinsulating film 501A. Accordingly, the stress applied to the insulatingfilm 501A at the time of the separation can be reduced, and thebreakdown of the insulating film 501A in the process can be prevented.

For example, when the insulating film 501A is separated from theseparation film 510W, a part of the separation film 510W in contact withthe insulating film 501A is separated from the other part and remains onthe insulating film 501A in some cases. In such cases, the part of theseparation film 510W remaining on the insulating film n 501A can beremoved by an etching method. Thus, the insulating film 501A can beexposed.

Eleventh Step

In an eleventh step, the first base 510L is stacked (see U11 in FIG. 14,FIG. 21, and FIG. 22).

The method for manufacturing the display panel described in thisembodiment includes the following steps: forming a separation film overa process substrate; forming an opening portion in an insulating filmand an opening portion overlapping with the opening portion in theseparation film; forming an electrode in contact with the processsubstrate in the opening portion; forming a conductive film in contactwith the electrode, a pixel circuit electrically connected to theconductive film, and a display element electrically connected to thepixel circuit; and performing separation from the process substrate.Thus, the electrode can have one end in contact with the conductive filmand the other end exposed at the opening portion. As a result, a methodfor manufacturing a novel display panel that is highly convenient orreliable can be provided.

Method 2 for Manufacturing Input/Output Device

Another method for manufacturing the input/output device of oneembodiment of the present invention will be described with reference toFIGS. 23 to 29.

FIG. 23 is a flow chart showing the method for manufacturing theinput/output device of one embodiment of the present invention.

FIGS. 24A to 29 each illustrate a structure of the display panel of oneembodiment of the present invention in a manufacturing process. FIGS.24A to 24C, FIGS. 26A and 26B, and FIG. 28 are cross-sectional viewstaken along the cutting plane lines X1-X2, X3-X4, and X5-X6 in FIG. 7A.FIGS. 25A to 25C, FIGS. 27A and 27B, and FIG. 29 are cross-sectionalviews taken along the cutting plane lines X7-X8, X9-X10, and X11-X12 inFIG. 7A.

Note that the method for manufacturing the input/output device that isdescribed with reference to FIGS. 23 to 29 is different from the methodfor manufacturing the input/output device that is described withreference to FIGS. 14 to 22 in the following points, for example: theinsulating film 501A is not used; the separation film 510W is alsoseparated from the process substrate 510; the alignment film AF1 isformed; and the first display element 750(i,j) is formed. Differentsteps are described in detail below, and the above description isreferred to for portions where the same method can be employed.

The method for manufacturing the input/output device described in thisembodiment includes the following 12 steps (see FIG. 23).

First Step

In a first step, the separation film 510W is formed over the processsubstrate 510 (see V1 in FIG. 23).

For the separation film 510W, an inorganic material, an organic resin,or the like can be used, for example. Specifically, a film containingpolyimide can be used for the separation film 510W. For the processsubstrate 510, non-alkali glass substrate can be used, for example.

Second Step

In a second step, an opening portion is formed in the separation film510W (see V2 in FIG. 23).

For example, the opening portion can be formed in a photosensitivepolyimide or the like by using a photolithography method. As anotherexample, the opening portion can be formed in a polyimide or the like byusing a hard mask and an ashing method.

Third Step

In a third step, the electrode 519B in contact with the processsubstrate 510 is formed in the opening portion (see V3 in FIG. 23, FIG.24A, and FIG. 25A).

For example, an electroless plating method or a sputtering method can beused for forming the electrode 519B. The electrode 519B can have apredetermined shape by, for example, removing an unnecessary portionthereof. Specifically, a chemical mechanical polishing method or thelike can be used, or a photolithography method and an etching method canbe used.

Note that the electrode is formed using a material that can be separatedfrom the process substrate 510 in a later step. In the case where theprocess substrate 510 is formed using glass, for example, the electrodecan be formed using a material having poor adhesion to glass.Specifically, copper or the like can be used for the electrode.

Fourth Step

In a fourth step, the first electrode 751(i,j), the insulating film 501Cincluding the opening portion 591B, the conductive film 511B in contactwith the electrode 519B, and the pixel circuit 530(i,j) electricallyconnected to the conductive film 511B are formed (see V4 in FIG. 23,FIG. 24B, and FIG. 25B). Note that the conductive film 511B includes aregion overlapping with the insulating film 501C and the opening portion591B. The conductive film 511B includes a region in contact with theelectrode 519B.

The conductive film 511B can be formed using, for example, a conductivefilm formed in the same step as the conductive film 512B functioning asa source electrode or a drain electrode of the transistor M. Theconductive film 511B that occupies a part of the opening portion 591B inthe insulating film 501C can be referred to as through electrode. Inother words, the conductive film 511B that fills a part of the openingportion 591B can be referred to as through electrode.

Fifth Step

In a fifth step, the second display element 550(i,j) electricallyconnected to the pixel circuit 530(i,j) is formed (see V5 in FIG. 23,FIG. 24C and FIG. 25C)

Sixth Step

In a sixth step, the second base 710L is stacked to overlap with theinsulating film 501C (see V6 in FIG. 23).

For example, the bonding layer 709 is formed by a printing method, acoating method, or the like, and the second base 710L is bonded to thefunctional layer 520 using the bonding layer 709.

Seventh Step

In a seventh step, separation from the process substrate 510 isperformed (see V7 in FIG. 23, FIG. 26A, and FIG. 27A).

For example, the separation film 510W is irradiated with laser lightfrom the process substrate 510 side to separate the separation film 510Wfrom the process substrate 510. Specifically, the separation film 510Wcontaining polyimide is irradiated with excimer laser light. Laser lighthaving a wavelength of 355 nm or laser light having a wavelength of 308nm can be used, for example.

Eighth Step

In an eighth step, the alignment film AF1 is formed (see V8 in FIG. 23,FIG. 26B, and FIG. 27B).

For example, a polyimide film to be used as the alignment film AF1 isformed. Specifically, the separation film 510W containing polyimide canbe thinned by an ashing method or the like and used as the alignmentfilm AF1. More specifically, the separation film 510W containingpolyimide can be thinned to a thickness of 70 nm and used as thealignment film AF1. As another example, soluble polyimide can be formedin a predetermined region by a printing method after the separation film510W is removed.

Ninth Step

In a ninth step, the base 770 is stacked so that the layer 753containing a liquid crystal material is positioned between the alignmentfilm AF1 and the base 770, and the layer 753 is sealed using the sealingmaterial 705; thus, the first display element is formed (see V9 in FIG.23, FIG. 28, and FIG. 29). Note that a material over which the secondelectrode 752, the coloring film CF1, the light-blocking film BM, thesensing element 775(g,h), and the like are formed in advance is used asthe base 770.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 4

In this embodiment, a display module and electronic devices that includea display panel of one embodiment of the present invention are describedwith reference to FIGS. 30A to 30H.

FIGS. 30A to 30H illustrate electronic devices. These electronic devicescan include housing 5000, a display portion 5001, a speaker 5003, an LEDlamp 5004, operation keys 5005 (including a power switch and anoperation switch), a connection terminal 5006, a sensor 5007 (a sensorhaving a function of measuring force, displacement, position, speed,acceleration, angular velocity, rotational frequency, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radiation,flow rate, humidity, gradient, oscillation, odor, or infrared ray), amicrophone 5008, and the like.

FIG. 30A illustrates a mobile computer that can include a switch 5009,an infrared port 5010, and the like in addition to the above components.FIG. 30B illustrates a portable image reproducing device (e.g., a DVDreproducing device) provided with a recording medium, and the portableimage reproducing device can include a second display portion 5002, arecording medium reading portion 5011, and the like in addition to theabove components. FIG. 30C illustrates a goggle-type display that caninclude the second display portion 5002, a support portion 5012, anearphone 5013, and the like in addition to the above components. FIG.30D illustrates a portable game console that can include the recordingmedium reading portion 5011 and the like in addition to the abovecomponents. FIG. 30E illustrates a digital camera with a televisionreception function, and the digital camera can include an antenna 5014,a shutter button 5015, an image receiving portion 5016, and the like inaddition to the above components. FIG. 30F illustrates a portable gameconsole that can include the second display portion 5002, the recordingmedium reading portion 5011, and the like in addition to the abovecomponents. FIG. 30G illustrates a portable television receiver that caninclude a charger 5017 capable of transmitting and receiving signals,and the like in addition to the above components.

The electronic devices in FIGS. 30A to 30G can have a variety offunctions such as a function of displaying a variety of data (e.g., astill image, a moving image, and a text image) on the display portion, atouch panel function, a function of displaying a calendar, date, time,and the like, a function of controlling processing with a variety ofsoftware (programs), a wireless communication function, a function ofbeing connected to a variety of computer networks with a wirelesscommunication function, a function of transmitting and receiving avariety of data with a wireless communication function, and a functionof reading out a program or data stored in a recording medium anddisplaying it on the display portion. Furthermore, the electronic deviceincluding a plurality of display portions can have a function ofdisplaying image data mainly on one display portion while displayingtext data mainly on another display portion, a function of displaying athree-dimensional image by displaying images on a plurality of displayportions with a parallax taken into account, or the like. Furthermore,the electronic device including an image receiving portion can have afunction of shooting a still image, a function of taking moving images,a function of automatically or manually correcting a shot image, afunction of storing a shot image in a recording medium (an externalrecording medium or a recording medium incorporated in the camera), afunction of displaying a shot image on the display portion, or the like.Note that functions of the electronic devices in FIGS. 30A to 30G arenot limited thereto, and the electronic devices can have a variety offunctions.

FIG. 30H illustrates a smart watch, which includes a housing 7302, adisplay panel 7304, operation buttons 7311 and 7312, a connectionterminal 7313, a band 7321, a clasp 7322, and the like.

The display panel 7304 mounted in the housing 7302 serving as a bezelincludes a non-rectangular display region. The display panel 7304 mayhave a rectangular display region. The display panel 7304 can display anicon 7305 indicating time, another icon 7306, and the like.

The smart watch in FIG. 30H can have a variety of functions such as afunction of displaying a variety of data (e.g., a still image, a movingimage, and a text image) on the display portion, a touch panel function,a function of displaying a calendar, date, time, and the like, afunction of controlling processing with a variety of software(programs), a wireless communication function, a function of beingconnected to a variety of computer networks with a wirelesscommunication function, a function of transmitting and receiving avariety of data with a wireless communication function, and a functionof reading out a program or data stored in a recording medium anddisplaying it on the display portion.

The housing 7302 can include a speaker, a sensor (a sensor having afunction of measuring force, displacement, position, speed,acceleration, angular velocity, rotational frequency, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radiation,flow rate, humidity, gradient, oscillation, odor, or infrared rays), amicrophone, and the like. Note that the smart watch can be manufacturedusing the light-emitting element for the display panel 7304.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

For example, in this specification and the like, an explicit description“X and Y are connected” means that X and Y are electrically connected, Xand Y are functionally connected, and X and Y are directly connected.Accordingly, without being limited to a predetermined connectionrelationship, for example, a connection relationship shown in drawingsor texts, another connection relationship is included in the drawings orthe texts.

Here, X and Y each denote an object (e.g., a device, an element, acircuit, a wiring, an electrode, a terminal, a conductive film, or alayer).

Examples of the case where X and Y are directly connected include thecase where an element that allows an electrical connection between X andY (e.g., a switch, a transistor, a capacitor, an inductor, a resistor, adiode, a display element, a light-emitting element, or a load) is notconnected between X and Y, and the case where X and Y are connectedwithout the element that allows the electrical connection between X andY provided therebetween.

For example, in the case where X and Y are electrically connected, oneor more elements that enable an electrical connection between X and Y(e.g., a switch, a transistor, a capacitor, an inductor, a resistor, adiode, a display element, a light-emitting element, or a load) can beconnected between X and Y. Note that the switch is controlled to beturned on or off. That is, the switch is conducting or not conducting(is turned on or off) to determine whether current flows therethrough ornot. Alternatively, the switch has a function of selecting and changinga current path. Note that the case where X and Y are electricallyconnected includes the case where X and Y are directly connected.

For example, in the case where X and Y are functionally connected, oneor more circuits that enable a functional connection between X and Y(e.g., a logic circuit such as an inverter, a NAND circuit, or a NORcircuit; a signal converter circuit such as a D/A converter circuit, anA/D converter circuit, or a gamma correction circuit; a potential levelconverter circuit such as a power supply circuit (e.g., a step-upcircuit or a step-down circuit) or a level shifter circuit for changingthe potential level of a signal; a voltage source; a current source; aswitching circuit; an amplifier circuit such as a circuit that canincrease signal amplitude, the amount of current, or the like, anoperational amplifier, a differential amplifier circuit, a sourcefollower circuit, and a buffer circuit; a signal generation circuit, amemory circuit; or a control circuit) can be connected between X and Y.For example, even when another circuit is interposed between X and Y, Xand Y are functionally connected if a signal output from X istransmitted to Y. Note that the case where X and Y and are functionallyconnected includes the case where X and Y are directly connected and thecase where X and Y are electrically connected.

Note that in this specification and the like, an explicit description “Xand Y are electrically connected” means that X and Y are electricallyconnected (i.e., the case where X and Y are connected with anotherelement or another circuit provided therebetween). X and Y arefunctionally connected (i.e., the case where X and Y are functionallyconnected with another circuit provided therebetween), and X and Y aredirectly connected (i.e., the case where X and Y are connected withoutanother element or another circuit provided therebetween). That is, inthis specification and the like, the explicit description “X and Y areelectrically connected” is the same as the description “X and Y areconnected”.

For example, any of the following expressions can be used for the casewhere a source (or a first terminal or the like) of a transistor iselectrically connected to X through (or not through) Z1 and a drain (ora second terminal or the like) of the transistor is electricallyconnected to Y through (or not through) Z2, or the case where a source(or a first terminal or the like) of a transistor is directly connectedto one part of Z1 and another part of Z1 is directly connected to Xwhile a drain (or a second terminal or the like) of the transistor isdirectly connected to one part of Z2 and another part of Z2 is directlyconnected to Y.

Examples of the expressions include, “X, Y, a source (or a firstterminal or the like) of a transistor, and a drain (or a second terminalor the like) of the transistor are electrically connected to each other,and X, the source (or the first terminal or the like) of the transistor,the drain (or the second terminal or the like) of the transistor, and Yare electrically connected to each other in this order”, “a source (or afirst terminal or the like) of a transistor is electrically connected toX, a drain (or a second terminal or the like) of the transistor iselectrically connected to Y, and X, the source (or the first terminal orthe like) of the transistor, the drain (or the second terminal or thelike) of the transistor, and Y are electrically connected to each otherin this order”, and “X is electrically connected to Y through a source(or a first terminal or the like) and a drain (or a second terminal orthe like) of a transistor, and X, the source (or the first terminal orthe like) of the transistor, the drain (or the second terminal or thelike) of the transistor, and Y are provided to be connected in thisorder”. When the connection order in a circuit configuration is definedby an expression similar to the above examples, a source (or a firstterminal or the like) and a drain (or a second terminal or the like) ofa transistor can be distinguished from each other to specify thetechnical scope.

Other examples of the expressions include, “a source (or a firstterminal or the like) of a transistor is electrically connected to Xthrough at least a first connection path, the first connection path doesnot include a second connection path, the second connection path is apath between the source (or the first terminal or the like) of thetransistor and a drain (or a second terminal or the like) of thetransistor, Z1 is on the first connection path, the drain (or the secondterminal or the like) of the transistor is electrically connected to Ythrough at least a third connection path, the third connection path doesnot include the second connection path, and Z2 is on the thirdconnection path” and “a source (or a first terminal or the like) of atransistor is electrically connected to X at least with a firstconnection path through Z1, the first connection path does not include asecond connection path, the second connection path includes a connectionpath through which the transistor is provided, a drain (or a secondterminal or the like) of the transistor is electrically connected to Yat least with a third connection path through Z2, and the thirdconnection path does not include the second connection path”. Stillanother example of the expression is “a source (or a first terminal orthe like) of a transistor is electrically connected to X through atleast Z1 on a first electrical path, the first electrical path does notinclude a second electrical path, the second electrical path is anelectrical path from the source (or the first terminal or the like) ofthe transistor to a drain (or a second terminal or the like) of thetransistor, the drain (or the second terminal or the like) of thetransistor is electrically connected to Y through at least Z2 on a thirdelectrical path, the third electrical path does not include a fourthelectrical path, and the fourth electrical path is an electrical pathfrom the drain (or the second terminal or the like) of the transistor tothe source (or the first terminal or the like) of the transistor”. Whenthe connection path in a circuit structure is defined by an expressionsimilar to the above examples, a source (or a first terminal or thelike) and a drain (or a second terminal or the like) of a transistor canbe distinguished from each other to specify the technical scope.

Note that these expressions are examples and there is no limitation onthe expressions. Here, X, Y, Z1, and Z2 each denote an object (e.g., adevice, an element, a circuit, a wiring, an electrode, a terminal, aconductive film, and a layer).

Even when independent components are electrically connected to eachother in a circuit diagram, one component has functions of a pluralityof components in some cases. For example, when part of a wiring alsofunctions as an electrode, one conductive film functions as the wiringand the electrode. Thus, “electrical connection” in this specificationincludes in its category such a case where one conductive film hasfunctions of a plurality of components.

EXPLANATION OF REFERENCE

CL(g): control line, CP: conductive material, ML(h): sensing signalline, ANO: conductive film, BR: conductive film, C(g): electrode, M(h):electrode, CSCOM: wiring, BM: light-blocking film, 510W: separationfilm, ACF1: conductive material, ACF2: conductive material, AF1:alignment film, AF2: alignment film, C11: capacitor, C12: capacitor,CF1: coloring film, CF2: coloring film, G1: scan line, G2: scan line,KB1: structure body, S1: signal line, S2: signal line, SW1: switch, SW2:switch, VCOM1: wiring, VCOM2: conductive film, FPC1: flexible printedcircuit, FPC2: flexible printed circuit, 501A: insulating film, 501A1:film, 501A2: film, 501C: insulating film, 504: conductive film, 505:bonding layer, 506: insulating film, 508: semiconductor film, 508A:region, 508B: region, 508C: region, 510: process substrate, 510B: base,510C: bonding layer, 510L: base, 511B: conductive film, 511C: conductivefilm, 511D: conductive film, 512A: conductive film, 512B: conductivefilm, 516: insulating film, 518: insulating film, 519B: electrode,519B1: region, 519B2: region, 519C: electrode, 519D: electrode, 520:functional layer, 521: insulating film, 522: connection portion, 524:conductive film, 528: insulating film, 530: pixel circuit, 550: displayelement, 551: electrode, 552: electrode, 552C: electrode, 553: layer,570: base, 591A: opening portion, 591B: opening portion, 591C openingportion, 591D: opening portion, 700TP1: input/output device, 700TP2:input/output device, 702: pixel, 705: sealing material, 706: insulatingfilm, 709: bonding layer, 710: base, 710A: insulating film, 710B: base,710C: bonding layer, 710L: base, 719: terminal, 720: functional layer,750: display element, 751: electrode, 751E: region, 751H: openingportion, 752: electrode, 753: layer, 770: base, 770D: functional film,770P: functional film, 771; insulating film, 775: sensing element,800TP1: input/output device, 801: region, 820: housing, 821: component,822: component, 823: hinge portion, 5000: housing, 5001: displayportion, 5002: display portion, 5003: speaker, 5004: LED lamp, 5005:operation key, 5006: connection terminal, 5007: sensor, 5008:microphone, 5009: switch, 5010: infrared port, 5011: memory mediumreading portion, 5012: support, 5013: earphone, 5014: antenna, 5015:shutter button, 5016: image receiving portion, 5017: charger, 7302:housing, 7304: display panel, 7305: icon, 7306: icon, 7311: operationbutton, 7312: operation button: 7313: connection terminal, 7321: band,7322: clasp.

This application is based on Japanese Patent Application serial no.2015-247412 filed with Japan Patent Office on Dec. 18, 2015, the entirecontents of winch are hereby incorporated by reference.

What is claimed is:
 1. A method for manufacturing a display panel,comprising: a first step of forming a separation film over a processsubstrate; a second step of forming a first insulating film including aregion overlapping with the separation film; a third step of heating thefirst insulating film; a fourth step of forming a second insulating filmincluding a region overlapping with the first insulating film; a fifthstep of forming a first opening portion in the second insulating filmand forming, in the first insulating film and the separation film, asecond opening portion overlapping with the first opening portion; asixth step of forming, in the second opening portion, an electrode incontact with the process substrate; a seventh step of forming aconductive film in contact with the electrode and forming a pixelcircuit electrically connected to the conductive film; an eighth step offorming a display element electrically connected to the pixel circuit; aninth step of stacking a second base to overlap with the secondinsulating film; a tenth step of performing separation from the processsubstrate; and an eleventh step of stacking a first base.
 2. The methodfor manufacturing the display panel according to claim 1, wherein theseparation film comprises an element selected from tungsten, molybdenum,titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium,rhodium, palladium, osmium, iridium, and silicon, or an alloy includingthe element.
 3. The method for manufacturing the display panel accordingto claim 1, wherein the separation film comprises a stack of a firstfilm comprising tungsten and a second film comprising an oxide oftungsten.
 4. The method for manufacturing the display panel according toclaim 1, wherein the separation film comprises polyimide, polyester,polyolefin, polyimide, polycarbonate, or an acrylic resin.
 5. The methodfor manufacturing the display panel according to claim 1, wherein thefirst insulating film comprises silicon, oxygen, and nitrogen.
 6. Themethod for manufacturing the display panel according to claim 1, whereinthe first insulating film comprises a hydrogen blocking layer.
 7. Themethod for manufacturing the display panel according to claim 1, whereinthe electrode comprises copper.
 8. The method for manufacturing thedisplay panel according to claim 1, further comprising in the fifth stepforming a recessed portion in the process substrate overlapping with thefirst opening portion.
 9. A method for manufacturing a display panel,comprising: a first step of forming a separation film over a processsubstrate; a second step of forming a first insulating film over theseparation film; a third step of heating the first insulating film sothat hydrogen diffuses from the first insulating film to the separationfilm; a fourth step of forming a second insulating film over the firstinsulating film; a fifth step of forming an opening in the secondinsulating film, the first insulating film and the separation film; asixth step of forming an electrode in contact with the process substratethrough the opening; a seventh step of forming a conductive film incontact with the electrode and forming a pixel circuit electricallyconnected to the conductive film; an eighth step of forming a displayelement electrically connected to the pixel circuit; a ninth step ofstacking a second base over the second insulating film; a tenth step ofperforming separation from the process substrate; and an eleventh stepof stacking a first base to overlap with the second base with thedisplay element and the pixel circuit placed between the first base andthe second base.
 10. The method for manufacturing the display panelaccording to claim 9, wherein the separation film comprises an elementselected from tungsten, molybdenum, titanium, tantalum, niobium, nickel,cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium,and silicon, or an alloy including the element.
 11. The method formanufacturing the display panel according to claim 9, wherein theseparation film comprises a stack of a first film comprising tungstenand a second film comprising an oxide of tungsten.
 12. The method formanufacturing the display panel according to claim 9, wherein theseparation film comprises polyimide, polyester, polyolefin, polyamide,polycarbonate, or an acrylic resin.
 13. The method for manufacturing thedisplay panel according to claim 9, wherein the first insulating filmcomprises silicon, oxygen, and nitrogen.
 14. The method formanufacturing the display panel according to claim 9, wherein the firstinsulating film comprises a hydrogen blocking layer.
 15. The method formanufacturing the display panel according to claim 9, wherein theelectrode comprises copper.
 16. The method for manufacturing the displaypanel according to claim 9, further comprising in the fifth step forminga recessed portion in the process substrate overlapping with theopening.